Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition
Berc Kalanyan, William A. Kimes, Ryan Beams, Stephan J. Stranick, Elias J. Garratt, Irina Kalish, Albert Davydov, Ravindra Kanjolia, James E. Maslar
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metalorganic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)-bis(dimethylamido)molybdenum and diethyl disulfide we deposit MoS2 films from one monolayer to 25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591°C at short deposition times, approximately 90 seconds for 1-2 layers. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metalorganic reagents in the controlled synthesis of TMDs.