Sperling, B.
, Kimes, W.
and Maslar, J.
(2010),
Reflection Absorption Infrared Spectroscopy During Atomic Layer Deposition of HfO2 Films From Tetrakis (ethylmethylamido) Hafnium and Water, Applied Surface Science, [online], https://doi.org/10.1016/j.apsusc.2010.03.050
(Accessed December 4, 2024)
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Reflection Absorption Infrared Spectroscopy During Atomic Layer Deposition of HfO2 Films From Tetrakis (ethylmethylamido) Hafnium and Water
Published
Author(s)
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Abstract
Tetrakis(ethylmethylamido)hafnium and water are commonly used precursors for atomic layer deposition of HfO2. Using reflection absorption infrared spectroscopy with a buried-metal-layer substrate, we probe surface species present during typical deposition conditions. We observe evidence for thermal decomposition of alkylamido ligands at 340 °C. Additionally, we find that complete saturation of the SiO2 substrate occurs in the first cycle at ~ 100 °C whereas incomplete coverage is apparent even after many cycles at higher temperatures.Citation
Applied Surface Science
Volume
256
Issue
16
Pub Type
Journals
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Keywords
atomic layer deposition, infrared spectroscopy, hafnium oxide
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Created June 1, 2010, Updated November 10, 2018