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Reflection Absorption Infrared Spectroscopy During Atomic Layer Deposition of HfO2 Films From Tetrakis (ethylmethylamido) Hafnium and Water

Published

Author(s)

Brent A. Sperling, William A. Kimes, James E. Maslar

Abstract

Tetrakis(ethylmethylamido)hafnium and water are commonly used precursors for atomic layer deposition of HfO2. Using reflection absorption infrared spectroscopy with a buried-metal-layer substrate, we probe surface species present during typical deposition conditions. We observe evidence for thermal decomposition of alkylamido ligands at 340 °C. Additionally, we find that complete saturation of the SiO2 substrate occurs in the first cycle at ~ 100 °C whereas incomplete coverage is apparent even after many cycles at higher temperatures.
Citation
Applied Surface Science
Volume
256
Issue
16

Keywords

atomic layer deposition, infrared spectroscopy, hafnium oxide

Citation

Sperling, B. , Kimes, W. and Maslar, J. (2010), Reflection Absorption Infrared Spectroscopy During Atomic Layer Deposition of HfO2 Films From Tetrakis (ethylmethylamido) Hafnium and Water, Applied Surface Science, [online], https://doi.org/10.1016/j.apsusc.2010.03.050 (Accessed April 14, 2024)
Created June 1, 2010, Updated November 10, 2018