Maslar, J.
, Hurst, W.
, Burgess, D.
, Kimes, W.
and Nguyen, N.
(2007),
In Situ Characterization of Gas-Phase Species Present During Hafnium Oxide Atomic Layer Deposition, ECS Transactions, [online], https://doi.org/10.1149/1.2408909
(Accessed September 16, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
In Situ Characterization of Gas-Phase Species Present During Hafnium Oxide Atomic Layer Deposition
Published
Author(s)
, , , ,
Abstract
In this work, the species present in the gas phase during atomic layer deposition of hafnium oxide were investigated in an attempt to gain insight into the chemistry of this system. Hafnium oxide was deposited on a silicon substrate using tetrakis(ethylmethylamino) hafnium, Hf[N(C2H5)(CH3)]4, and water. In situ infrared absorption spectroscopy measurements were performed in a research-grade, horizontal-flow reactor under a range of deposition conditions. Density functional theory quantum calculations of vibrational frequencies of expected species were used to facilitate identification of observed spectral features.Citation
ECS Transactions
Volume
2
Issue
7
Pub Type
Journals
Download Paper
Keywords
atomic layer deposition, infrared absorption spectroscopy, process metrology
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 1, 2007, Updated November 10, 2018