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Thin-Film Resistance Thermometers on Silicon Wafers

Published

Author(s)

Kenneth G. Kreider, Dean C. Ripple, William A. Kimes

Abstract

Thermal processing of semiconductors is a critical, capital intensive step in achieving high yields and profitability in the manufacturing of electronic chips such as ASICs and DRAMs. Many techniques have been developed to control the temperature of the silicon wafer during thermal processing. One way is to monitor the wafer surface temperature using thin-film sensors on instrumented test wafers. These sensors are also used to calibrate the lightpipe infrared thermometers used to monitor the wafer temperatures during processing. Members of the semiconductor fabrication industries have encouraged NIST to investigate the use of thin-film Pt resistance thermometers directly on the wafer to monitor temperatures during thermal processing. In particular it is proposed that we could achieve lower uncertainties for the measurement of temperature on silicon wafers being processed at 200 C to 600 C.
Citation
Measurement Science & Technology

Keywords

platinum thin-films, silicon wafer temperature measurement, sputtered thin-films, temperature measurement, thin-film resistors

Citation

Kreider, K. , Ripple, D. and Kimes, W. (2009), Thin-Film Resistance Thermometers on Silicon Wafers, Measurement Science & Technology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=832220 (Accessed February 27, 2024)
Created March 3, 2009, Updated February 17, 2017