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Search Publications by: Albert Davydov (Fed)

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Displaying 151 - 175 of 184

Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors

October 16, 2008
Author(s)
Abhishek Motayed, Mark D. Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N. Mohammad
We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of NH3

Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN

October 16, 2008
Author(s)
Nadin Mahadik, M V. Rao, Albert Davydov
he performance of novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically stable low resistance ohmic contacts. Isochronal (2 min) anneals in the 600 degrees C to 740 degrees C temperature range and

Thermodynamic Assessment of the Co-Mo System

October 16, 2008
Author(s)
Albert Davydov, Ursula R. Kattner
The experimental thermochemical and phase diagram data for the Co-Mo system were assessed. A consistent thermodynamic description, using a Redlich-Kister model for the solution phases and sublattice and line compound models for the intermetallics, was

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the

The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films

May 9, 2008
Author(s)
D. H. Hill, Robert A. Bartynski, Nhan Van Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M. Frank
We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS results are

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

A Brighter Future From Gallium Nitride Nanowires

October 1, 2006
Author(s)
Kristine A. Bertness, Norman Sanford, Albert Davydov
How might nitride semiconductor nanowires change the future of computing? In the spirit of this special issue on how science fiction might become working technology, we offer some speculations and explain the science behind them. This article focuses on

Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns

January 5, 2006
Author(s)
J E. Van Nostrand, J. E. Averett, R Cortez, J. Boeckl, C Stutz, Norman Sanford, Albert Davydov, M M. Maska
Vertically oriented gallium nitride GaN nanocolumns (NCs) approximately 90±10 nm wide and 0.75 microns tall were grown by plasma-assisted molecular beam epitaxy on Al_(2)O_(3)(0001) and Si(111). The dense packing of the NCs gives them the appearance of a

Catalyst-Free Growth of GaN Nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Norman Sanford, Joy Barker, John B. Schlager, Alexana Roshko, Albert Davydov, Igor Levin
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were used. The nanowires displayed a number of interesting materials properties, including room-temperature luminescence intensity

High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Alexana Roshko, Albert Davydov, Igor Levin, Mark D. Vaudin, Joy Barker, John B. Schlager, Norman Sanford, Larry Robins
We have grown a variety of isolated GaN nanowires using gas-source molecular beam epitaxy (MBE) and characterized their structural and optical properties. The nanowires have demonstrated a number of promising materials characteristics, including low defect

Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns

January 1, 2006
Author(s)
J E. Van Nostrand, K L. Averett, R Cortez, J Boecki, C E. Stutz, Norman Sanford, Albert Davydov, J D. Albrecht
Vertically oriented GaN nanocolumns (NCs) approximately 90+10 nm wide and 0.75 microns tall were grown byt plasma-assisted molecular beam epitaxy on Al_(2)O_(3)(0001) and Si(111). The dense packing of the NCs gives them the appearance of a continuous film

Spontaneously grown GaN and AlGaN nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Alexana Roshko, Norman A. Sanford, Joy Barker, Albert Davydov
We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE) that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (1 1 1) substrates. The nanowires were oriented along the GaN c-axis and normal to the

Growth Habits and Defects in ZnO Nanowires Grown on GaN/Sapphire Substrates

August 31, 2005
Author(s)
Igor Levin, Albert Davydov, Babak Nikoobakht, Norman A. Sanford, Pavel Mogilevsky
Growth habits and defects in epitaxial ZnO nanowires grown from Au catalyst on (0001) GaN/sapphire substrate using Vapor-Liquid-Solid (VLS) technique were studied using electron microscopy and X-ray diffraction. The results revealed presence of both

Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates

August 31, 2005
Author(s)
Igor Levin, Albert Davydov, Babak Nikoobakht, Norman Sanford, Pavel Mogilevsky
Growth habits and defects in epitaxial ZnO nanowires grown from Au catalyst on (00.1) GaN/sapphire substrate using the vapor-liquid-solid (VLS) technique were studied using electron microscopy and x-ray diffraction. The results revealed presence of both

Measurement of Second Order Susceptibilities of GaN and AlGaN

March 1, 2005
Author(s)
Norman Sanford, Albert Davydov, Denis V. Tsvetkov, Vladimir A. Dmitriev, Stacia Keller, Umesh Mishra, Steven P. DenBaars, S S. Park, J H. Han
Rotational Maker fringes, scaled with respect to χ 11 (2) of crystalline quartz, were used to determine the nonlinear optical coefficients χ 31 (2) and χ 33 (2) for samples of thin Al xGa 1-xN films and a bulk free-standing GaN platelet. The Al xGa 1-xN

Fabrication and Analysis of GaN Nanorods grown by MBE

January 1, 2005
Author(s)
Norman Sanford, Larry Robins, Matthew H. Gray, J E. Van Nostrand, C Stutz, R Cortez, Albert Davydov, Alexander J. Shapiro, Igor Levin, Alexana Roshko
GaN nanorods were grown on c-plane sapphire substrates under N-rich conditions by plasma-assisted molecular-beam epitaxy. Scanning electron microsopy revealed densely packed nanorods of hexagonal cross section with diameters ranging from roughly 40 to 100

Refractive index and birefringence of InGaN films grown by MOCVD

January 1, 2005
Author(s)
Norman Sanford, Anneli Munkholm, Mike A. Krames, Alexander J. Shapiro, Igor Levin, Albert Davydov, Safak Sayan, L Wielunski, T E. Madey
The refractive index and birefringence of InxGa1'xN films grown on GaN layers were measured by prism coupling used in conjunction with multilayer optical waveguide analysis. Samples with x = 0.036, 0.049, 0.060, and 0.066 were examined at the separate

Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN

June 1, 2004
Author(s)
Albert Davydov, Leonid A. Bendersky, William J. Boettinger, Daniel Josell, Mark D. Vaudin, C S. Chang, Ichiro Takeuchi
A combinatorial library of Au/Ni metalizations on GaN were microstructurally characterized by x-ray diffraction (XRD), electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). The array of single- and bi-layered metal elements

Structural, Electronic and Optical Properties of B-(Fe 1-x Co 2 )Si 2

March 11, 2004
Author(s)
D B. Migas, Leo Miglio, M Rebien, W Henrion, P Stauss, Anthony G. Birdwell, Albert Davydov, V L. Shaposhnikov, V E. Borisenko
Optimized crystal structure, electronic bands and density of states nearby the band gap, and the dielectric function of -(Fe1-xCox)Si2 with x equal to 0.0625 and 0.125 were obtained by means of total energy ultrasoft pseudopotential and full-potential

Controlling The Growth Direction of ZnO Nanowires (NWs) on c and a -Plane Sapphire

February 1, 2004
Author(s)
Babak Nikoobakht, Albert Davydov, Stephan J. Stranick
The issue of controlling the growth direction of NWs is vital in nanotechnology applications and future optoelectronic devices. In an effort to address the above, we have begun studies aimed at selectively controlling the growth direction of horizontal
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