Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Growth Habits and Defects in ZnO Nanowires Grown on GaN/Sapphire Substrates



Igor Levin, Albert Davydov, Babak Nikoobakht, Norman A. Sanford, Pavel Mogilevsky


Growth habits and defects in epitaxial ZnO nanowires grown from Au catalyst on (0001) GaN/sapphire substrate using Vapor-Liquid-Solid (VLS) technique were studied using electron microscopy and X-ray diffraction. The results revealed presence of both horizontal (crawling-like) and vertical nanowires having similar orientation relationship to the substrate (00.1)ZnO||(00.1)GaN, [11.0]GaN. The crawling-like growth precedes the vertical growth, and the coalescence and overgrowth of the crawling nanowires produce a highly defective layer which separates the substrate and vertical nanorods. Transmission electron microscopy revealed a high density of planar defects in this interfacial layer. Significant density of stacking faults residing on the (0001) planes was also observed in the shorter vertical nanorods. X-ray diffraction revealed that the crawling nanowires endure residual compressive strain, whereas the vertical nanorods grow strain-free.
Applied Physics/ Letters


electron microscopy, GaN, growth, nanowire, ZnZ


Levin, I. , Davydov, A. , Nikoobakht, B. , Sanford, N. and Mogilevsky, P. (2005), Growth Habits and Defects in ZnO Nanowires Grown on GaN/Sapphire Substrates, Applied Physics/ Letters (Accessed April 20, 2024)
Created August 31, 2005, Updated February 19, 2017