365 nm Operation of n-nanowire/p-substrate Gallium Nitride Homojunction Light Emitting Diode

Published

October 16, 2008

Author(s)

Abhishek Motayed, Albert Davydov, Maoqi He, S N. Mohammad, John Melngailis

Abstract

We demonstrate the realization of the n-gallium nitride nanowire (n-GaNnw)/p-gallium nitride substrate (p-GaN) homojunction light emitting diodes (LEDs). Utilizing electric field assisted alignment, n-type gallium nitride nanowires, grown using direct reaction of metal Ga and NH3, were placed on the surface of a p-doped GaN thin film. Successful electrical injection, and electroluminescence with 370 nm peak wavelength and 25 nm full width half maximum (fwhm) is observed from these p-n junctions. These nanowire/epilayer p-n junction diodes were passivated with a thin layer of SiO2, and did not exhibit any bulk of surface defects related parasitic emission. The present fabrication scheme, utilizing only batch fabrication techniques, yields extremely reliable electrically injected nanoscale UV light sources. This technique is simple, self-aligned, and rapid with high yield suitable for nanowires of all different material systems, and has significant potential for development of nanoscale light sources.

Citation

Nano Letters

Pub Type

Journals

Keywords

GaN nanowires, light emitting diodes, nanowire LEDs, nnaoscale photnic devices

Citation

Motayed, A. , Davydov, A. , He, M. , Mohammad, S. and Melngailis, J. (2008), 365 nm Operation of n-nanowire/p-substrate Gallium Nitride Homojunction Light Emitting Diode, Nano Letters (Accessed December 12, 2024)