Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
Nhan V. Nguyen, Martin M. Frank, Albert Davydov, Deane Chandler-Horowitz
The crystallinity of atomic layer deposition hafnium oxide was found to be thickness-dependent with the thinnest films being amorphous and thick films being at least partially crystalline. Similar films fabricated by metalorganic chemical vapor deposition are mostly monoclinic. Formation of hafnium silicate by admixture of 20 % Si prevents crystallization. Electronic defects are reflected by an absorption feature 0.2 ' 0.3 eV below the optical band gap. These defects arise in polycrystalline, but not in amorphous, hafnium-based oxides.
, Frank, M.
, Davydov, A.
and Chandler-Horowitz, D.
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, Applied Physics Letters
(Accessed June 1, 2023)