Nguyen, N.
, Frank, M.
, Davydov, A.
and Chandler-Horowitz, D.
(2005),
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, Applied Physics Letters
(Accessed October 6, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
Published
Author(s)
, Martin M. Frank, ,
Abstract
The crystallinity of atomic layer deposition hafnium oxide was found to be thickness-dependent with the thinnest films being amorphous and thick films being at least partially crystalline. Similar films fabricated by metalorganic chemical vapor deposition are mostly monoclinic. Formation of hafnium silicate by admixture of 20 % Si prevents crystallization. Electronic defects are reflected by an absorption feature 0.2 ' 0.3 eV below the optical band gap. These defects arise in polycrystalline, but not in amorphous, hafnium-based oxides.Citation
Applied Physics Letters
Volume
87
Pub Type
Journals
Keywords
Bandgap, Crystallization, Defects, Hafnium oxide, Hafnium Silicate, Optical properties
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created November 17, 2005, Updated January 27, 2020