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Search Publications by: Albert Davydov (Fed)

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Displaying 126 - 150 of 184

UV-Assisted Alcohol Sensing Using SnO_(2) Functionalized GaN Nanowire Devices

September 1, 2012
Author(s)
Ritu Bajpai, Abhishek Motayed, Albert Davydov, Vladimir Oleshko, Geetha G. Aluri, Kristine A. Bertness, Mulpuri V. Rao, Mona E. Zaghloul
A chemiresistor type sensor for selective alcohol sensing has been realized from gallium nitride nanowires (NWs) functionalized with sputter-deposited tin dioxide nanoparticles. Two-terminal devices were fabricated using standard microfabrication

Photoluminescence Polarization in Strained GaN/AlGaN Core/Shell Nanowires

August 17, 2012
Author(s)
G. Jacopin, L. Rigutti, S. Bellei, P. Lavenus, F. H. Julien, Albert Davydov, Denis Tsvetkov, Kristine A. Bertness, Norman Sanford, John B. Schlager, M. Tchemycheva
The polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (µ-PL) and interpreted in terms of a strain dependent 6x6 k.p theoretical model. The NW

Sensing Trace Amounts of Nitro-Aromatic Explosives using Nanowire-Nanocluster Hybrids

August 1, 2012
Author(s)
Geetha G. Aluri, Abhishek Motayed, Albert Davydov, Vladimir P. Oleshko, Kristine A. Bertness, Norman A. Sanford
The threat of terrorism and the need for homeland security calls for advanced technologies to detect the concealed explosives safely and efficiently. We demonstrated highly sensitive and selective detection of traces of nitro-aromatic explosive compounds

UV-Assisted Alcohol Sensing with Zinc Oxide Functionalized Gallium Nitride Nanowires

July 1, 2012
Author(s)
Ritu Bajpai, Abhishek Motayed, Albert Davydov, Kristine A. Bertness, Mona E. Zaghloul
Alcohol sensors using gallium nitride (GaN) nanowires (NWs) functionalized with zinc oxide (ZnO) nanoparticles have been demonstrated. These sensors operate at room temperature, are completely recoverable and demonstrate a response and recovery time of the

3-Aminopropyltriethoxysilane Functionalization and Biotinylation of 4H-SiC for Immobilization of Streptavidin

June 1, 2012
Author(s)
Elissa H. Williams, Albert Davydov, John A. Schreifels, Mulpuri V. Rao, Abhishek Motayed, Siddarth Sundaresan, Peter Bocchini, Lee J. Richter, Gheorghe Stan, Kristen L. Steffens, Rebecca A. Zangmeister
(0001) 4H-SiC was functionalized with 3-aminopropyltriethoxysilane (APTES) and subsequently biotinylated for the immobilization of streptavidin. Atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), ellipsometry, fluorescence microscopy

Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

June 1, 2012
Author(s)
Mariano A. Real, Tian T. Shen, George R. Jones Jr., Randolph Elmquist, Johannes A. Soons, Albert Davydov
Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene's performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit

A thickness-shear MEMS resonator employing electromechanical transduction through a coplanar waveguide

May 21, 2012
Author(s)
Ward L. Johnson, Thomas M. Wallis, Pavel Kabos, Eduard Rocas, Juan C. Collado Gomez, Li-Anne Liew, Albert Davydov, Alivia Plankis, Paul R. Heyliger
The design, modeling, fabrication, and characterization of a vibrationally trapped thickness-shear MEMS resonator is presented. This device is intended to avoid various limitations of flexural MEMS resonators, including nonlinearity, clamping losses

Methanol, Ethanol, and Hydrogen Sensing using Metal-Oxide and Metal (TiO subscript 2-Pt) Composite Nanoclusters on GaN Nanowires: A New Route towards Tailoring the Selectivity of Nanowire-Nanocluster based Chemical Sensors.

May 12, 2012
Author(s)
Geetha G. Aluri, Abhishek Motayed, Albert Davydov, Vladimir Oleshko, Kristine A. Bertness, Norman Sanford, Mulpuri V. Rao
We demonstrate a new method for tailoring the selectivity of chemical sensors using nanowires decorated with multicomponent nanoclusters (metal and metal-oxide)-based hybrid sensors. In the present study we demonstrate the change of selectivity of titanium

Ultimate bending strength of Si nanowires

April 11, 2012
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Igor Levin, Robert F. Cook
Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this work, the ultimate bending strengths of Si nanowires with radii in the 20 nm to 60 nm range

Electrolyte stability determines scaling limits for solid-state 3D Li-ion batteries

December 20, 2011
Author(s)
Dmitry A. Ruzmetov, Vladimir P. Oleshko, Paul M. Haney, Henri J. Lezec, K Karki, K Baloch, Amit K. Agrawal, Albert Davydov, Sergiy Krylyuk, Y Liu, JY Huang, Mihaela M. Tanase, John Cumings, Albert A. Talin
Rechargeable, all-solid state Li-ion batteries (LIBs) with high specific capacity and small footprint are highly desirable to power an emerging class of miniature, autonomous microsystems that operate without a hardwire for power or communications. A

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires

October 25, 2011
Author(s)
Aric Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman Sanford, Albert Davydov, Abhishek Motayed, Denis Tsvetkov
We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant

Abstract of the presentation: Position- and polarization- resolved microphotoluminescence of GaN/AlGaN core-shell nanowires

October 17, 2011
Author(s)
Albert Davydov, G. Jacopin, S. Bellei, Denis Tsvetkov, Kristine A. Bertness, L. Rigutti, Norman A. Sanford, John B. Schlager, M. Tchernycheva, F. H. Julien
Over the past decade, core-shell nanowires (NWs) have been intensively used as the building blocks of novel optoelectronic devices as solar cells [1], LEds [2], naolasers [3]. Indeed, this geometry not only allows to passivate surface states, but also

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions

GaN Nanowires Grown by Molecular Beam Epitaxy

August 1, 2011
Author(s)
Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and high

Highly Selective GaN-nanowire/TiO2-nanocluser Hybrid Sensors for Detection of Benzene and Related Environment Pollutants

July 22, 2011
Author(s)
Geetha G. Aluri, Abhishek Motayed, Albert Davydov, Vladimir Oleshko, Kristine A. Bertness, Norman Sanford
Nanowire-nanocluster hybrid chemical sensors were realized by functionalizing gallium nitride (GaN) nanowires with titanium dioxide (TiO2) nanoclusters for selectively sensing benzene and other related aromatic compounds. Hybrid sensor devices were

GaN nanowires grown by molecular beam epitaxy

July 1, 2011
Author(s)
Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include defect-free growth mode with no residual strain, long photoluminescence lifetime, low surface recombination velocity and high mechanical quality

Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

December 15, 2010
Author(s)
Sergiy Krylyuk, Albert Davydov, Igor Levin
Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si

Compressive stress effect on the radial elastic modulus of oxidized Si nanowires

March 23, 2010
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook
Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their
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