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Search Publications by: Albert Davydov (Fed)

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Displaying 101 - 125 of 184

Near-field microwave microscopy of one-dimensional nanostructures

May 23, 2016
Author(s)
Samuel Berweger, Paul T. Blanchard, Rebecca C. Quardokus, Frank W. DelRio, Thomas Mitchell (Mitch) Wallis, Pavel Kabos, Sergiy Krylyuk, Albert Davydov
With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic

Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si (111)

May 15, 2016
Author(s)
Sergiy Krylyuk, Marcus Muller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Ratan K. Debnath, Jong Yoon Ha, Baomei Wen, Paul T. Blanchard, Alexana Roshko, Abhishek Motayed, Matthew R. King, Albert Davydov, Jurgen Christen
Large arrays of GaN core-shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal-organic vapor phase epitaxy

Vertical 2D/3D Semiconductor Heterostructures based on Epitaxial Molybdenum Disulfide and Gallium Nitride

February 19, 2016
Author(s)
Dmitry A. Ruzmetov, Kehao Zhang, Gheorghe Stan, Berc Kalanyan, Ganesh R. Bhimanapati, Sarah M. Eichfeld, R A. Burke, Pankaj B. Shah, Terrance P. O'Regan, Frank J. Crowne, A. Glen Birdwell, Joshua A. Robinson, Albert Davydov, Tony G. Ivanov
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoSub2) directly on

UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film

December 24, 2015
Author(s)
Ting Xie, Nichole Sullivan, Kristen L. Steffens, Baomei Wen, Guannan Liu, Ratan K. Debnath, Albert Davydov, Romel D. Gomez, Abhishek Motayed
TiO2 thin film based, chemiresistive sensors for NO2 gas which operate at room temperature under ultraviolet (UV) illumination have been demonstrated in this work. The rf-sputter deposited and post-annealed TiO2 thin films have been characterized by atomic

High Throughput Screening of Substrates for Synthesis and Functionalization of 2D Materials

August 26, 2015
Author(s)
Arunima Singh, Albert Davydov, Kiran Mathew, Richard G. Hennig, Francesca M. Tavazza
Several 2D materials have been synthesized experimentally, but many theoretically predicted 2D materials are yet to be synthesized. Here, we will review a density-functional theory based framework to enable high-throughput screening of suitable substrates

Sapphire as an ideal substrate and a dielectric layer for n-layer MoS2 thin films

August 5, 2015
Author(s)
Arunima Singh, Francesca M. Tavazza, Albert Davydov, Richard G. Hennig
Sapphire (α-Al2O3) is a common substrate for the growth of single- to few-layer MoS2 films, and as a high-κ dielectric gate oxide for 2D-MoS2 based transistors. Using density-functional theory calculations with a van der Waals functional we investigate the

Faceting Control in Core/Shell GaN micropillars using Selective Epitaxy

October 15, 2014
Author(s)
Sergiy Krylyuk, Heayoung Yoon, Baomei Wen, Abhishek Motayed, Albert Davydov, Matt N. King
We report on fabricating large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consisted of inductively coupled plasma (ICP) etch of lithographically patterned n-type GaN substrate followed by selective growth of

Miniature all-solid-state heterostructure nanowire Li-ion batteries as a tool for engineering and structural diagnostics of nanoscale electrochemical processes.

August 15, 2014
Author(s)
Vladimir P. Oleshko, Thomas F. Lam, Dmitry A. Ruzmetov, Paul M. Haney, Henri J. Lezec, Albert Davydov, Sergiy Krylyuk, John Cumings, Albert A. Talin
Complex interfacial phenomena and phase transformations that govern the operation of Li-ion batteries (LiBs) require detailed nanoscale 3D structural and compositional characterization that can be directly related to the capacity and electrical transport

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

June 27, 2014
Author(s)
Duming Zhang, Hongwoo H. Baek, Jeonghoon Ha, Tong Zhang, Jonathan E. Wyrick, Albert Davydov, Young Kuk, Joseph A. Stroscio
Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked

Solution-based functionalization of gallium nitride nanowires for protein sensor development

April 17, 2014
Author(s)
Albert Davydov, Elissa H. Williams, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kristine A. Bertness, Amy Manocchi, M V. Rao, John A. Schreifels
A solution-based functionalization method for the specific and selective attachment of the streptavidin (SA) protein to gallium nitride (GaN) nanowires (NWs) is presented. By exploiting streptavidin's strong affinity for its ligand biotin, SA

Effect of High-(KAPPA) Dielectric Passivation on Electrical Transport and Low-Frequency Noise in Single-Layer MoS_(2) Devices

March 18, 2014
Author(s)
Deepak K. Sharma, Matin Amani, Abhishek Motayed, Pankaj B. Shah, A. Glen Birdwell , Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Madan Dubey, Qiliang Li, Albert Davydov
We have studied temperature-dependent (300K to 77K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single layer molybdenum disulfide MoS_(2) based back-gated field-effect transistors (FETs). Electrical

Three-deminstional Hemisphere-structured LiSn_(0.0125)Mn_(1.975)O_(4) Thin-Film Cathodes

March 5, 2014
Author(s)
Haena Yim, Woo Yeon Kong, Seok-JIn Yoon, Sahn Nahm, Ho Won Jang, Yung-Eun Sung, Jong Y. Ha, Albert Davydov, Ji-Won Choi
Three-dimensional (3D) high surface area LiSn_(0.0125)Mn_(1.975)O-(4) thin film cathodes have been fabricated in order to increase a charge/discharge capacity in the Li-ion battery. Metal oxide films were deposited by RF magnetron sputtering on close

Top-Down Fabrication of Large-Area GaN Micro and Nano Pillars

February 19, 2014
Author(s)
Albert Davydov, Ratan K. Debnath, B. Wen, Dipak Paramanik, Abhishek Motayed, M. King
Large-area gallim nitride (GaN) nanopillars (NPs) arrays were fabricated by plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep-UV lithography, inductively-coupled plasma etching, and follow-on chemical treatments were

Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Emerging Applications.

October 2, 2013
Author(s)
Vladimir P. Oleshko, Elissa H. Williams, Albert Davydov, Sergiy Krylyuk, Abhishek Motayed, Dmitry A. Ruzmetov, Thomas F. Lam, Henri J. Lezec, Albert A. Talin
Functionalized individual semiconductor nanowires (SNWs) and 3D SNW arrays attract a continuously growing interest for applications in optoelectronics, sensing, and energy storage. High-resolution field-emission analytical (S)TEM enables critical insights

Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

June 3, 2013
Author(s)
Mariano A. Real, Eric Lass, Fan-Hung H. Liu, Tian T. Shen, George R. Jones Jr., Johannes A. Soons, David B. Newell, Albert Davydov, Randolph Elmquist
A well-controlled technique for high-temperature epitaxial growth on 6H-SiC(0001) substrates is shown to allow development of monolayer graphene that exhibits promise for precise metrological applications. Face-to-face (FTF) and face-to-graphite (FTG)

Nitro-Aromatic Explosive Sensing Using GaN Nanowire - Titania Nanocluster Hybrids

May 1, 2013
Author(s)
Albert Davydov, Geetha G. Aluri, Abhishek Motayed, Vladimir P. Oleshko, Kristine A. Bertness, Mulpuri V. Rao
A highly sensitive and selective detection of traces of nitro-aromatic explosive compounds by functionalizing gallium nitride (GaN) nanowires with anatase phase titania (titanium dioxide, TiO2) nanoclusters is demonstrated. The ultraviolet light photo

Selective Streptavidin Bioconjugation on Si and SiC nanowires for Biosensor Applications.

January 14, 2013
Author(s)
Elissa H. Williams, John A. Schreifels, Mulpuri V. Rao, Albert Davydov, Vladimir P. Oleshko, Nancy J. Lin, Kristen L. Steffens, Sergiy Krylyuk, Kristine A. Bertness, Amy Manocchi, Yaroslav Koshka
A functionalization method for the specific and selective immobilization of the streptavidin (SA) protein on semiconductor nanowires (NWs) was developed. Silicon (Si) and silicon carbide (SiC) NWs were functionalized with 3-aminopropyltriethoxysilane

Selective Streptavidin Bioconjugation on Si, SiC, and GaN Nanowires for Biosensor Applications.

October 19, 2012
Author(s)
Elissa H. Williams, John A. Schreifels, Mulpuri V. Rao, Albert Davydov, Vladimir Oleshko, Nancy Lin, Kristen L. Steffens, Sergiy Krylyuk, Kristine A. Bertness, Amy Manocchi, Yaroslav Koshka
A functionalization method for the specific and selective immobilization of the streptavidin (SA) protein on semiconductor nanowires (NWs) was developed. Silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) NWs were functionalized with 3

In Situ Atomic Scale Imaging of Electrochemical Lithiation of Silicon

October 7, 2012
Author(s)
Xiao Hua Liu, Sergiy Krylyuk, Albert Davydov, Jian Yu Huang
In lithium-ion batteries, the electrochemical reaction between the electrodes and lithium is a critical process that controls the capacity, cyclability and reliability of the battery. Despite intensive study, the atomistic mechanism of the electrochemical
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