Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN

Published

Author(s)

Nadin Mahadik, M V. Rao, Albert Davydov

Abstract

he performance of novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically stable low resistance ohmic contacts. Isochronal (2 min) anneals in the 600 degrees C to 740 degrees C temperature range and isothermal (690 degrees C) anneals for 2 to 10 min duration were performed in inert atmosphere. For the 690 degrees C isothermal schedule, ohmic behavior was observed after annealing for 3 min or longer with a lowest contact resistivity of 9.1x10 superscript -5} Ω cm superscript 2} after the 10 min anneal for a net donor doping concentration of 9.2x10 superscript 17} cm superscript-3}. Mean roughness (R subscript a}) for anneals at 690 degrees C was almost constant at around 5 nm, up to an annealing duration of 10 min, which indicates a good thermal stability of the contact scheme.
Citation
Journal of Applied Physics

Keywords

electrical contacts, GaN semiconductor, Ohmic contact

Citation

Mahadik, N. , Rao, M. and Davydov, A. (2008), Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN, Journal of Applied Physics (Accessed November 10, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 16, 2008