Mahadik, N.
, Rao, M.
and Davydov, A.
(2008),
Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN, Journal of Applied Physics
(Accessed October 6, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN
Published
Author(s)
, M V. Rao,
Abstract
he performance of novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically stable low resistance ohmic contacts. Isochronal (2 min) anneals in the 600 degrees C to 740 degrees C temperature range and isothermal (690 degrees C) anneals for 2 to 10 min duration were performed in inert atmosphere. For the 690 degrees C isothermal schedule, ohmic behavior was observed after annealing for 3 min or longer with a lowest contact resistivity of 9.1x10 superscript -5} Ω cm superscript 2} after the 10 min anneal for a net donor doping concentration of 9.2x10 superscript 17} cm superscript-3}. Mean roughness (R subscript a}) for anneals at 690 degrees C was almost constant at around 5 nm, up to an annealing duration of 10 min, which indicates a good thermal stability of the contact scheme.Citation
Journal of Applied Physics
Pub Type
Journals
Keywords
electrical contacts, GaN semiconductor, Ohmic contact
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created October 16, 2008