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Search Publications by: Albert Davydov (Fed)

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Displaying 76 - 100 of 170

Controlled Synthesis of Single-Crystalline InN Nanorods

February 19, 2017
Author(s)
Igor Levin, Albert Davydov, O M. Kryliouk, Hyun Jong Park, YongSun Won, T J. Anderson, J P. Kim, J A. Freitas
Single-crystalline InN nanorods were successfully grown on c-Al203, GaN, and Si substrates by non catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Stable gas-phase oligomer formation is proposed as the nucleation mechanism for

Laser-assisted atom probe tomography of Ti/TiN films deposited on Si

December 21, 2016
Author(s)
Norman A. Sanford, Paul T. Blanchard, Ryan M. White, Michael R. Vissers, Albert Davydov, D R. Diercks, David P. Pappas
Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm). The trilayers were deposited on Si substrates by reactive sputtering. Electron energy loss

Identification of the Crystal Symmetry in 1T' MoTe2 with Polarization-Resolved Second Harmonic Generation and Raman Scattering

October 13, 2016
Author(s)
Ryan Beams, Luiz Gustavo Cancado, Sergiy Krylyuk, Irina Kalish, Berc Kalanyan, Arunima Singh, Kamal Choudhary, Patrick Vora, Francesca M. Tavazza, Albert Davydov, Stephan J. Stranick
We study the crystal symmetry properties of few-layer 1T' MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T' MoTe2 is know to be inversion symmetric, however, we nd that the inversion symmetry is

Electrochemical intercalation of lithium ions into NbSe2 nanosheets

September 21, 2016
Author(s)
Albert Davydov, Anand V. Patel, Louisa Meshi, Emily Hitz, Liangbing Hu
Transition metal dichalcogenides (TMDCs) have been known for decades to have unique properties and recently attracted broad attention for their two-dimensional (2D) characteristics. NbSe2 is a metallic TMDC that has been studied for its charge density wave

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3

September 7, 2016
Author(s)
Arunima Singh, Albert Davydov, Francesca M. Tavazza, Lincoln J. Lauhon, Xiaochen Ren, Mercouri G. Kanatzidis, Lei Fang
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants

Ultraviolet photodetectors based on transition metal oxides

September 1, 2016
Author(s)
Ratan K. Debnath, Albert Davydov
Ultraviolet (UV) photodetector (PD) has attracted extensive attention owing to their broad application in digital imaging, missile plume detection, optical communications, and biomedical sensing. Conventional Si based UV PD requires costly high pass

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

August 3, 2016
Author(s)
Ratan K. Debnath, MD R. Hasan, Arunima Singh, Vladimir P. Oleshko, Shiqi Guo, Asha Rani, Abhishek Motayed, Nhan V. Nguyen, Albert Davydov
The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we

Phonon Anharmonicity in Bulk Td-MoTe2

July 18, 2016
Author(s)
Albert Davydov, Sergiy Krylyuk, Irina Kalish, Ryan Beams, Patrick Vora
We examine anharmonic contributions to the optical phonon frequency in bulk Td-MoTe2 phase through temperature-dependent Raman spectroscopy. At temperatures greater than 100 K we find that the optical phonon modes redshift linearly with temperature in

Near-theoretical fracture strengths in native and oxidized silicon nanowires

June 21, 2016
Author(s)
Frank W. DelRio, Ryan M. White, Sergiy Krylyuk, Albert Davydov, Lawrence H. Friedman, Robert F. Cook
In this letter, fracture strengths σf of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σf in the Si was comparable to the

Thermoelectric properties of monolayer armchair MoS2 nanoribbons

June 16, 2016
Author(s)
Abbas Arab, Albert Davydov, Dimitrios A. Papaconstantopoulos, Qiliang Li
First-principle calculations have been performed to study thermoelectric properties of monolayer armchair nanoribbons. Structures have been relaxed to minimize force and stress before any calculation. Density functional theory using non-equilibrium Green’s

MPInterfaces: A Materials Project based Python Tool for a High Throughput Computational Screening of Interfacial Systems

May 31, 2016
Author(s)
Arunima Singh, Kiran Mathew, Joshua Grabriel, Kamal Choudhary, Susan B. Sinnott, Albert Davydov, Francesca M. Tavazza, Richard G. Hennig
A Materials Project based open-source python tool, MPInterfaces, has been developed to automate the high throughput computational screening and study of interfacial systems. The framework encompasses creation and manipulation of interface structures for

Near-field microwave microscopy of one-dimensional nanostructures

May 23, 2016
Author(s)
Samuel Berweger, Paul T. Blanchard, Rebecca C. Quardokus, Frank W. DelRio, Thomas Mitchell (Mitch) Wallis, Pavel Kabos, Sergiy Krylyuk, Albert Davydov
With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic

Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si (111)

May 15, 2016
Author(s)
Sergiy Krylyuk, Marcus Muller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Ratan K. Debnath, Jong Yoon Ha, Baomei Wen, Paul T. Blanchard, Alexana Roshko, Abhishek Motayed, Matthew R. King, Albert Davydov, Jurgen Christen
Large arrays of GaN core-shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal-organic vapor phase epitaxy

Vertical 2D/3D Semiconductor Heterostructures based on Epitaxial Molybdenum Disulfide and Gallium Nitride

February 19, 2016
Author(s)
Dmitry A. Ruzmetov, Kehao Zhang, Gheorghe Stan, Berc Kalanyan, Ganesh R. Bhimanapati, Sarah M. Eichfeld, R A. Burke, Pankaj B. Shah, Terrance P. O'Regan, Frank J. Crowne, A. Glen Birdwell, Joshua A. Robinson, Albert Davydov, Tony G. Ivanov
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoSub2) directly on

UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film

December 24, 2015
Author(s)
Ting Xie, Nichole Sullivan, Kristen L. Steffens, Baomei Wen, Guannan Liu, Ratan K. Debnath, Albert Davydov, Romel D. Gomez, Abhishek Motayed
TiO2 thin film based, chemiresistive sensors for NO2 gas which operate at room temperature under ultraviolet (UV) illumination have been demonstrated in this work. The rf-sputter deposited and post-annealed TiO2 thin films have been characterized by atomic

High Throughput Screening of Substrates for Synthesis and Functionalization of 2D Materials

August 26, 2015
Author(s)
Arunima Singh, Albert Davydov, Kiran Mathew, Richard G. Hennig, Francesca M. Tavazza
Several 2D materials have been synthesized experimentally, but many theoretically predicted 2D materials are yet to be synthesized. Here, we will review a density-functional theory based framework to enable high-throughput screening of suitable substrates

Sapphire as an ideal substrate and a dielectric layer for n-layer MoS2 thin films

August 5, 2015
Author(s)
Arunima Singh, Francesca M. Tavazza, Albert Davydov, Richard G. Hennig
Sapphire (α-Al2O3) is a common substrate for the growth of single- to few-layer MoS2 films, and as a high-κ dielectric gate oxide for 2D-MoS2 based transistors. Using density-functional theory calculations with a van der Waals functional we investigate the

Faceting Control in Core/Shell GaN micropillars using Selective Epitaxy

October 15, 2014
Author(s)
Sergiy Krylyuk, Heayoung Yoon, Baomei Wen, Abhishek Motayed, Albert Davydov, Matt N. King
We report on fabricating large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consisted of inductively coupled plasma (ICP) etch of lithographically patterned n-type GaN substrate followed by selective growth of

Miniature all-solid-state heterostructure nanowire Li-ion batteries as a tool for engineering and structural diagnostics of nanoscale electrochemical processes.

August 15, 2014
Author(s)
Vladimir P. Oleshko, Thomas F. Lam, Dmitry A. Ruzmetov, Paul M. Haney, Henri J. Lezec, Albert Davydov, Sergiy Krylyuk, John Cumings, Albert A. Talin
Complex interfacial phenomena and phase transformations that govern the operation of Li-ion batteries (LiBs) require detailed nanoscale 3D structural and compositional characterization that can be directly related to the capacity and electrical transport

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

June 27, 2014
Author(s)
Duming Zhang, Hongwoo H. Baek, Jeonghoon Ha, Tong Zhang, Jonathan E. Wyrick, Albert Davydov, Young Kuk, Joseph A. Stroscio
Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked

Solution-based functionalization of gallium nitride nanowires for protein sensor development

April 17, 2014
Author(s)
Albert Davydov, Elissa H. Williams, Vladimir P. Oleshko, Kristen L. Steffens, Igor Levin, Nancy J. Lin, Kristine A. Bertness, Amy Manocchi, M V. Rao, John A. Schreifels
A solution-based functionalization method for the specific and selective attachment of the streptavidin (SA) protein to gallium nitride (GaN) nanowires (NWs) is presented. By exploiting streptavidin's strong affinity for its ligand biotin, SA