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Ultraviolet photodetectors based on transition metal oxides

Published

Author(s)

Ratan K. Debnath, Albert Davydov

Abstract

Ultraviolet (UV) photodetector (PD) has attracted extensive attention owing to their broad application in digital imaging, missile plume detection, optical communications, and biomedical sensing. Conventional Si based UV PD requires costly high pass optical filters and phosphors to tune its spectral response and thus poses extreme challenge to achieve a UV detection system with miniature size, high energy-efficiency and low-cost. To overcome the limitations inherent from the narrow bandgap of Si, UV PDs consisted of wide-bandgap materials, such as GaN, SiC, and transition metal oxides (TMOs) such as ZnO, NiO etc. have recently emerged and are being rapidly developed. The application of TMOs in the UV PDs mainly rely on their intrinsic properties, including optical transparency in the near-UV and visible spectra, low impact to environment, thermal stability and feasibility of constructing band-tunable heterojunctions. Here, we provide a perspective on the recent developments in UV photodetection based on TMO materials including thin films and one-dimensional nanostructures. The chapter begins with describing the operation principles and requirements for the PD devices, followed by the latest developments in materials and device architectures. The chapter is concluded with future challenges and outlook in this area.
Citation
Photodetectors: Characterization, Applications and Recent Advances
Publisher Info
Nova Science Publishers, Inc., Hauppauge, NY

Keywords

photodetector, UV, quantum efficiency, responsivity

Citation

Debnath, R. and Davydov, A. (2016), Ultraviolet photodetectors based on transition metal oxides, Nova Science Publishers, Inc., Hauppauge, NY (Accessed April 23, 2024)
Created September 1, 2016, Updated March 27, 2017