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An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

Published

Author(s)

Ratan K. Debnath, MD R. Hasan, Arunima Singh, Vladimir P. Oleshko, Shiqi Guo, Asha Rani, Abhishek Motayed, Nhan V. Nguyen, Albert Davydov

Abstract

The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we demonstrate a facile, low- cost and scalable, catalyst-free one-step solution-processed approach to grow one dimensional Sb2Se3 nanostructures directly on flexible substrates. Structural characterization and compositional analyses reveal high-quality single-crystalline material with orthorhombic crystal structure and a near-stoichiometric Sb/Se atomic ratio. We measure a direct band gap of 1.12 eV, which is consistent with predictions from theoretical simulations, indicating strong NIR potential. The fabricated metal-semiconductor-metal photodetectors exhibit fast response (on the order of milliseconds) and high performance (responsivity ~ 0.27 A/W) as well as excellent mechanical flexibility and durability. The results demonstrate the potential of molecular-ink-based Sb2Se3 nanostructures for flexible electronic and broadband optoelectronic device applications.
Citation
Advanced Electronic Materials
Volume
2
Issue
9

Keywords

photodetector

Citation

Debnath, R. , Hasan, M. , Singh, A. , Oleshko, V. , Guo, S. , Rani, A. , Motayed, A. , Nguyen, N. and Davydov, A. (2016), An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors, Advanced Electronic Materials (Accessed February 29, 2024)
Created August 3, 2016, Updated February 19, 2017