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The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we demonstrate a facile, low- cost and scalable, catalyst-free one-step solution-processed approach to grow one dimensional Sb2Se3 nanostructures directly on flexible substrates. Structural characterization and compositional analyses reveal high-quality single-crystalline material with orthorhombic crystal structure and a near-stoichiometric Sb/Se atomic ratio. We measure a direct band gap of 1.12 eV, which is consistent with predictions from theoretical simulations, indicating strong NIR potential. The fabricated metal-semiconductor-metal photodetectors exhibit fast response (on the order of milliseconds) and high performance (responsivity ~ 0.27 A/W) as well as excellent mechanical flexibility and durability. The results demonstrate the potential of molecular-ink-based Sb2Se3 nanostructures for flexible electronic and broadband optoelectronic device applications.
Advanced Electronic Materials