U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Neil M. Zimmerman (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 82

Using a High-Value Resistor in Single-Electron Counting Measurements

June 1, 2002
Author(s)
Randolph Elmquist, Neil M. Zimmerman, William Huber
An experiment using a high-value cryogenic resistor is proposed, with the aim of improving the experimental link between three quantum electrical standards. This technique is new in its approach and does not require feedback from either a voltage detector

Using a High-Value Resistor in Triangle Comparisons of Electrical Standards

June 1, 2002
Author(s)
Randolph Elmquist, Neil M. Zimmerman, William Huber
We propose an experiment with some advantages over other direct quantum metrology triangle comparisons. First, by using a cryogenic resistor that can be calibrated, the QHR standard needs to be used only for short periods. Second, the experiment does not

Excellent charge offset stability in a Si-based single-electron tunneling transistor

November 5, 2001
Author(s)
Neil M. Zimmerman, W H. Huber, Akira Fujiwara, Yasuo Takahashi
We have measured the long-term drift and the short-term 1/f noise in the charge offset Q0(t) in two Si-based single-electron tunneling transistors (SETTs). In contrast to metal-based SETTs, these devices show excellent charge stability, drifting by less

Long-Term Charge Offset Noise in Coulomb-Blockade Devices

January 9, 2001
Author(s)
William Huber, S Martin, Neil M. Zimmerman
While Coulomb-Blockade devices have shown promise as qubit systems or qubit state detectors, large scale parallelization of these devices is severely hampered due to the low-frequency charge offset (Q 0) drift in time. We note that an extrapolation of the

Electrical Conductivity of Xenon at Megabar Pressures

September 1, 2000
Author(s)
M. I. Eremets, E. A. Gregory, V. V. Struzhkin, H. K. Mao, R. J. Hemley, N. Mulders, Neil M. Zimmerman
The electrical transport properties of solid xenon were directly measured at pressures up to 155 GPa and temperatures from 300 K to 27 mK. The temperature dependence of resistance changed from semiconducting to metallic at pressures between 121 and 138 GPa

A Capacitance Standard Based on Counting Electrons: Progress Report

May 1, 2000
Author(s)
Mark W. Keller, Neil M. Zimmerman, Ali L. Eichenberger, John M. Martinis
We have built a prototype capacitance standard based on single-electron tunneling (SET) devices and a cryogenic vacuum-gap capacitor. We are currently involved in a thorough uncertainty analysis of the prototype, and we are preparing to make a direct

Long-Term Charge Offset and Glassy Dynamics in SET Transistors

May 1, 2000
Author(s)
Neil M. Zimmerman, William Huber
We report long-term measurements of the charge offset Q 0 in SET (single-electron tunneling) transistors, made of Al/AlO x/Al tunnel junctions. In one case, we saw a Q 0 which was constant (within 0.1 e) over a twelve-day period, except for one excursion

A Capacitance Standard Based on Counting Electrons

September 10, 1999
Author(s)
Mark W. Keller, Ali L. Eichenberger, John M. Martinis, Neil M. Zimmerman
A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated

Behavior of a Charged Two-Level Fluctuator in Al-AlO x -Al Single-Electron Transistor

June 1, 1999
Author(s)
M. Kenyon, J. L. Cobb, A. Amar, D. Song, C. J. Lobb, Neil M. Zimmerman, F. C. Wellstood
We have studied the behavior of a charged two-level fluctuator in an Al-AlO x -Al single-electron transistor (SET) in the normal state over a temperature range from 85 mK to 3K. The fluctuator caused the SET's island charge to shift by δQ0= 0.11 0.025 e

Charge Offset and Noise in SET Transistors

July 1, 1998
Author(s)
Neil M. Zimmerman, J. L. Cobb
We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlOx/Al tunnel junctions. Previous work has shown that significant time

A Primer on Electrical Units in the Systems International

June 1, 1998
Author(s)
Neil M. Zimmerman
I examine the dissemination of the electrical units, from basic physical laws to commercial calibrations. I discuss the important distinction between realization and representation of units, which refers back to the distinction between SI (Le Systeme

Modulation of the Charge of a Single-Electron Transistor by Distant Defects

September 1, 1997
Author(s)
Neil M. Zimmerman, J. L. Cobb, Alan F. Clark
We have systematically measured two-level fluctuator [TLF] noise in a single-electron tunneling transistor. From the amplitude, duty cycle, and presence of intermediate states, we conclude that there is a cluster of triggered TLF's in this case. The