Zimmerman, N.
and Cobb, J.
(1998),
Charge Offset and Noise in SET Transistors, Tech. Dig., Conf. on Precision Electromagnetic Measurements, Washington, DC, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=13112
(Accessed May 18, 2024)
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Charge Offset and Noise in SET Transistors
Published
Author(s)
, J. L. Cobb
Abstract
We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlOx/Al tunnel junctions. Previous work has shown that significant time-dependent noise will arise from locations outside the tunnel junctions, as well as within the junctions. Our ongoing work includes attempts to reduce or eliminate the charge offset and noise in fabricated devices.Proceedings Title
Tech. Dig., Conf. on Precision Electromagnetic Measurements
Conference Dates
July 6-10, 1998
Conference Location
Washington, DC
Pub Type
Conferences
Download Paper
Keywords
SET devices, electrical noise, capacitance
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created June 30, 1998, Updated October 12, 2021