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Charge Offset and Noise in SET Transistors

Published

Author(s)

Neil M. Zimmerman, J. L. Cobb

Abstract

We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlOx/Al tunnel junctions. Previous work has shown that significant time-dependent noise will arise from locations outside the tunnel junctions, as well as within the junctions. Our ongoing work includes attempts to reduce or eliminate the charge offset and noise in fabricated devices.
Proceedings Title
Tech. Dig., Conf. on Precision Electromagnetic Measurements
Conference Dates
July 6-10, 1998
Conference Location
Washington, DC

Keywords

SET devices, electrical noise, capacitance

Citation

Zimmerman, N. and Cobb, J. (1998), Charge Offset and Noise in SET Transistors, Tech. Dig., Conf. on Precision Electromagnetic Measurements, Washington, DC, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=13112 (Accessed February 23, 2024)
Created June 30, 1998, Updated October 12, 2021