Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Modulation of the Charge of a Single-Electron Transistor by Distant Defects

Published

Author(s)

Neil M. Zimmerman, J. L. Cobb, Alan F. Clark

Abstract

We have systematically measured two-level fluctuator [TLF] noise in a single-electron tunneling transistor. From the amplitude, duty cycle, and presence of intermediate states, we conclude that there is a cluster of triggered TLF's in this case. The systematic dependence of switching rate on gate voltage, and the lack of rate dependence on a finer scale or on source-drain voltage, tell us unambiguously that the TLF's are not located in the tunnel barriers. We thus conclude, as has been previously inferred, that noisy defects outside the barrier can lead to significant modulation of the transistor island charge (up to about 0.2 e).
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
56
Issue
12

Keywords

single-electron transistor, two-level fluctuator (TLF)

Citation

Zimmerman, N. , Cobb, J. and Clark, A. (1997), Modulation of the Charge of a Single-Electron Transistor by Distant Defects, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=9536 (Accessed March 2, 2024)
Created September 1, 1997, Updated October 12, 2021