Modulation of the Charge of a Single-Electron Transistor by Distant Defects

Published

September 1, 1997

Author(s)

Neil M. Zimmerman, J. L. Cobb, Alan F. Clark

Abstract

We have systematically measured two-level fluctuator [TLF] noise in a single-electron tunneling transistor. From the amplitude, duty cycle, and presence of intermediate states, we conclude that there is a cluster of triggered TLF's in this case. The systematic dependence of switching rate on gate voltage, and the lack of rate dependence on a finer scale or on source-drain voltage, tell us unambiguously that the TLF's are not located in the tunnel barriers. We thus conclude, as has been previously inferred, that noisy defects outside the barrier can lead to significant modulation of the transistor island charge (up to about 0.2 e).

Citation

Physical Review B (Condensed Matter and Materials Physics)

Volume

56

Issue

12

Pub Type

Journals

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Keywords

single-electron transistor, two-level fluctuator (TLF)

Citation

Zimmerman, N. , Cobb, J. and Clark, A. (1997), Modulation of the Charge of a Single-Electron Transistor by Distant Defects, Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=9536 (Accessed October 18, 2025)