Long-Term Charge Offset and Glassy Dynamics in SET Transistors

Published

May 1, 2000

Author(s)

Neil M. Zimmerman, William Huber

Abstract

We report long-term measurements of the charge offset Q₀ in SET (single-electron tunneling) transistors, made of Al/AlO_x/Al tunnel junctions. In one case, we saw a Q₀ which was constant (within 0.1 e) over a twelve-day period, except for one excursion of short interval. In most cases, we see a transient (since cooldown) relaxation of the rate of wandering of Q₀ over one to two weeks, which is very reminiscent of the non-equilibrium heat evolution observed in glasses. We propose that this mechanism drives both the initial high level of noise in SET transistors, as well as the high error rate in SET pumps.

Proceedings Title

Proc., Conference on Precision Electromagnetic Measurements (CPEM)

Conference Dates

May 14-19, 2000

Conference Location

Sydney, 1, AS

Pub Type

Conferences

Download Paper

Local Download

Keywords

SET transistors, charge offset, SET integration

Citation

Zimmerman, N. and Huber, W. (2000), Long-Term Charge Offset and Glassy Dynamics in SET Transistors, Proc., Conference on Precision Electromagnetic Measurements (CPEM), Sydney, 1, AS, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=26378 (Accessed May 9, 2025)