Long-Term Charge Offset and Glassy Dynamics in SET Transistors
Neil M. Zimmerman, William Huber
We report long-term measurements of the charge offset Q0 in SET (single-electron tunneling) transistors, made of Al/AlOx/Al tunnel junctions. In one case, we saw a Q0 which was constant (within 0.1 e) over a twelve-day period, except for one excursion of short interval. In most cases, we see a transient (since cooldown) relaxation of the rate of wandering of Q0 over one to two weeks, which is very reminiscent of the non-equilibrium heat evolution observed in glasses. We propose that this mechanism drives both the initial high level of noise in SET transistors, as well as the high error rate in SET pumps.
Proc., Conference on Precision Electromagnetic Measurements (CPEM)
and Huber, W.
Long-Term Charge Offset and Glassy Dynamics in SET Transistors, Proc., Conference on Precision Electromagnetic Measurements (CPEM), Sydney, 1, AS, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=26378
(Accessed November 30, 2023)