NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Dynamic Input Capacitance of Single-Electron Transistors and the Effect on Charge-Sensitive Electrometers

Published

Author(s)

Neil M. Zimmerman, Mark W. Keller
Citation
Journal of Applied Physics
Volume
87
Issue
12
Pub Type
Journals

Download Paper

Local Download

Keywords

charge sensitive electrometer, input capacitance, single electron tunneling

Citation

Zimmerman, N. and Keller, M. (2000), Dynamic Input Capacitance of Single-Electron Transistors and the Effect on Charge-Sensitive Electrometers, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=4031 (Accessed October 2, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created May 31, 2000, Updated October 12, 2021
Was this page helpful?