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Long-Term Charge Offset Noise in Coulomb-Blockade Devices

Published

Author(s)

William Huber, S Martin, Neil M. Zimmerman

Abstract

While Coulomb-Blockade devices have shown promise as qubit systems or qubit state detectors, large scale parallelization of these devices is severely hampered due to the low-frequency charge offset (Q0) drift in time. We note that an extrapolation of the 1/f noise to lower frequencies cannot account for the large (δQ0 1 e) changes. We have investigated possible approaches towards reducing the Q0 noise in Al/Al2O3-x/Al based Coulomb-Blockade (CB) devices. In Al/Al2O3-x/Al-based CB devices, the maximum stability was typically 1 day to 3 days, nearly independent of processing techniques or annealing treatments. In our best result, δQ0 < 0.1 e (except for a single excursion) for 12 days. Encasing devices in a continuous metal vault (a nano-Faraday cage) did not, however, improve the Q0 noise. We also discuss one specific, identified cause of the low frequency (< 103 Hz) Q0 noise. By extending conventional, two-level system theory (previously used to explain the behavior of macroscopic disordered materials), the noise is shown to be caused by atomic structural relaxations of nearby insulating regions.
Proceedings Title
Proc., International Conference on the Experimental Implementation of Quantum Computing
Conference Dates
January 9-20, 2001
Conference Location
Sydney, 1, AS
Conference Title
International Conference on the Experimental Implementation of Quantum Computing

Keywords

charge offset, Faraday screening, low temperature glass dynamics, single-electron tunneling

Citation

Huber, W. , Martin, S. and Zimmerman, N. (2001), Long-Term Charge Offset Noise in Coulomb-Blockade Devices, Proc., International Conference on the Experimental Implementation of Quantum Computing, Sydney, 1, AS, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30222 (Accessed March 3, 2024)
Created January 8, 2001, Updated October 12, 2021