Excellent charge offset stability in a Si-based single-electron tunneling transistor

Published

November 5, 2001

Author(s)

Neil M. Zimmerman, W H. Huber, Akira Fujiwara, Yasuo Takahashi

Abstract

We have measured the long-term drift and the short-term 1/f noise in the charge offset Q0(t) in two Si-based single-electron tunneling transistors (SETTs). In contrast to metal-based SETTs, these devices show excellent charge stability, drifting by less than 0.01e over weeks. The short-term 1/f noise magnitude is similar to the metal-based devices, demonstrating that different mechanisms are responsible for the short-term noise versus the long-term drift. Finally, we show that, in addition to the excellent stability over time, it may be possible to make the devices more robust with respect to voltage-induced instability as well.

Citation

Applied Physics Letters

Volume

79

Pub Type

Journals

Download Paper

https://doi.org/10.1063/1.1415776

Citation

Zimmerman, N. , Huber, W. , Fujiwara, A. and Takahashi, Y. (2001), Excellent charge offset stability in a Si-based single-electron tunneling transistor, Applied Physics Letters, [online], https://doi.org/10.1063/1.1415776 (Accessed October 26, 2025)