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Excellent charge offset stability in a Si-based single-electron tunneling transistor



Neil M. Zimmerman, W H. Huber, Akira Fujiwara, Yasuo Takahashi


We have measured the long-term drift and the short-term 1/f noise in the charge offset Q0(t) in two Si-based single-electron tunneling transistors (SETTs). In contrast to metal-based SETTs, these devices show excellent charge stability, drifting by less than 0.01e over weeks. The short-term 1/f noise magnitude is similar to the metal-based devices, demonstrating that different mechanisms are responsible for the short-term noise versus the long-term drift. Finally, we show that, in addition to the excellent stability over time, it may be possible to make the devices more robust with respect to voltage-induced instability as well.
Applied Physics Letters


Zimmerman, N. , Huber, W. , Fujiwara, A. and Takahashi, Y. (2001), Excellent charge offset stability in a Si-based single-electron tunneling transistor, Applied Physics Letters, [online], (Accessed June 18, 2024)


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Created November 5, 2001, Updated November 10, 2018