Kenyon, M.
, Cobb, J.
, Amar, A.
, Song, D.
, Lobb, C.
, Zimmerman, N.
and Wellstood, F.
(1999),
Behavior of a Charged Two-Level Fluctuator in Al-AlO<sub>x</sub> -Al Single-Electron Transistor, IEEE Transactions on Applied Superconductivity
(Accessed October 20, 2025)
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Behavior of a Charged Two-Level Fluctuator in Al-AlOx -Al Single-Electron Transistor
Published
Author(s)
M. Kenyon, J. L. Cobb, A. Amar, D. Song, C. J. Lobb, , F. C. Wellstood
Abstract
We have studied the behavior of a charged two-level fluctuator in an Al-AlOx -Al single-electron transistor (SET) in the normal state over a temperature range from 85 mK to 3K. The fluctuator caused the SET's island charge to shift by δQ0= 0.11 0.025 e with an escape rate out of each state which was periodic in the gate voltage. We compare our results to a model which assumes the fluctuator resides in the tunnel junction and discuss model predictions for when the device is in the superconductng state.Citation
IEEE Transactions on Applied Superconductivity
Volume
9
Issue
2
Pub Type
Journals
Keywords
single-electron tunneling, superconductivity, noise
Citation
Issues
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Created June 1, 1999, Updated October 12, 2021