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Behavior of a Charged Two-Level Fluctuator in Al-AlOx -Al Single-Electron Transistor

Published

Author(s)

M. Kenyon, J. L. Cobb, A. Amar, D. Song, C. J. Lobb, Neil M. Zimmerman, F. C. Wellstood

Abstract

We have studied the behavior of a charged two-level fluctuator in an Al-AlOx -Al single-electron transistor (SET) in the normal state over a temperature range from 85 mK to 3K. The fluctuator caused the SET's island charge to shift by δQ0= 0.11 0.025 e with an escape rate out of each state which was periodic in the gate voltage. We compare our results to a model which assumes the fluctuator resides in the tunnel junction and discuss model predictions for when the device is in the superconductng state.
Citation
IEEE Transactions on Applied Superconductivity
Volume
9
Issue
2

Keywords

single-electron tunneling, superconductivity, noise

Citation

Kenyon, M. , Cobb, J. , Amar, A. , Song, D. , Lobb, C. , Zimmerman, N. and Wellstood, F. (1999), Behavior of a Charged Two-Level Fluctuator in Al-AlO<sub>x</sub> -Al Single-Electron Transistor, IEEE Transactions on Applied Superconductivity (Accessed April 17, 2024)
Created June 1, 1999, Updated October 12, 2021