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Search Publications by: Curt A. Richter (Fed)

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Displaying 76 - 100 of 239

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

July 11, 2012
Author(s)
Rusen Yan, Qin Zhang, Wei Li, Irene G. Calizo, Tian T. Shen, Curt A. Richter, Angela R. Hight Walker, Xuelei X. Liang, David J. Gundlach, Nhan Van Nguyen, Huili G. Xing, Alan Seabaugh
We determined the band alignment of a graphene-oxide-silicon structure using internal photoemission spectroscopy. From the flatband voltage and Dirac voltage we infer a 4.3 10e11 cm-2 negative extrinsic charge present on the graphene surface. Also, we

Switching Mechanisms in Flexible Solution-Processed TiO2 Memristors

July 11, 2012
Author(s)
Joseph L. Tedesco, Laurie Stephey, Madelaine H. Hernandez, Curt A. Richter, Nadine Gergel-Hackett
Memristors are emerging as unique electrical devices with potential applications in memory, reconfigurable logic, and biologically-inspired computing. Due to the novelty of these devices, the complete details of their switching mechanism are not yet well

Memristors with Flexible Electronic Applications

June 1, 2012
Author(s)
Nadine Gergel-Hackett, Joseph L. Tedesco, Curt A. Richter
In addition to the potential for memristors to be used in logic, memory, smart interconnects, and biologically-inspired architectures that could transform traditional silicon-based computing, memristors may enable such transformative technologies on

Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy

March 6, 2012
Author(s)
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A. Kirillov, Curt A. Richter, Nhan Van Nguyen
The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from

Spin transport in memristive devices

January 26, 2012
Author(s)
Hyuk-Jae Jang, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior

Towards clean and crackless transfer of graphene

January 2, 2012
Author(s)
Xuelei X. Liang, Brent A. Sperling, Irene G. Calizo, Guangjun Cheng, Christina Hacker, Qin Zhang, Yaw S. Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R. Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A. Richter
We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a "modified RCA clean"

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

December 7, 2011
Author(s)
Tian T. Shen, Wei Wu, Qingkai Yu, Curt A. Richter, Randolph E. Elmquist, David B. Newell, Yong P. Chen
We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm × 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si substrates, with typical carrier

Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

May 16, 2011
Author(s)
Xiaoxiao Zhu, Qiliang Li, D. E. Ioannou, Xuelei X. Liang, Diefeng Gu, Helmut Baumgart, John E. Bonevich, John S. Suehle, Curt A. Richter
We report the fabrication, characterization and simulation of Si nanowire SONOS-like non- volatile memory with HfO2 charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit

Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells

May 16, 2011
Author(s)
Xiaoxiao Zhu, Qiliang Li, D. E. Ioannou, Diefeng Gu, John E. Bonevich, Helmut Baumgart, John S. Suehle, Curt A. Richter
We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibit high

Flexible Memristors Fabricated through Sol-Gel Hydrolysis

May 1, 2011
Author(s)
Joseph L. Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A. Herzing, Madelaine H. Hernandez, Joseph J. Kopanski, Christina A. Hacker, Curt A. Richter
Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, transmission electron microscopy, and

Conduction and Loss Mechanisms in Flexible Oxide-Based Memristors

March 21, 2011
Author(s)
Joseph L. Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A. Herzing, Madelaine H. Hernandez, Christina A. Hacker, Jan Obrzut, Lee J. Richter, Curt A. Richter
In order to study the conduction and loss mechanisms behind their operation, flexible sol-gel based memristors were fabricated with differing oxide film thicknesses and device sizes. XPS, TEM, EELS, and VASE measurements indicated the oxide was amorphous

Metal-Molecule-Silicon Junctions Produced by Flip Chip Lamination of Dithiols

February 1, 2011
Author(s)
Michael A. Walsh, Curt A. Richter, Christina A. Hacker
The integration of organic molecules with silicon is increasingly being studied for potential uses in hybrid electronic devices. Creating dense and highly ordered organic monolayers on silicon with reliable metal contacts still remains a challenge. A novel

Switching in Flexible Titanium Oxide Memristors

June 25, 2010
Author(s)
Joseph L. Tedesco, Nadine E. Gergel-Hackett, Laurie A. Stephey, Christina A. Hacker, Curt A. Richter
In this study, memristors were fabricated on flexible polyethylene terephthalate (PET) substrates with aluminum contacts and a titanium dioxide film formed with a sol-gel of titanium isopropoxide and ethanol. To study the electric field dependence of