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Spin transport in memristive devices

Published

Author(s)

Hyuk-Jae Jang, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter

Abstract

We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magneto-resistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths. We expect our findings could advance current electronic technology combining spintronic and electronic functionalities.
Citation
Applied Physics Letters
Volume
100

Keywords

nanoelectronics, spintronics, memristive, memristor, random access memory, magneto-resistance

Citation

Jang, H. , Kirillov, O. , Jurchescu, O. and Richter, C. (2012), Spin transport in memristive devices, Applied Physics Letters (Accessed April 16, 2024)
Created January 25, 2012, Updated October 12, 2021