Gergel-Hackett, N.
, Aquilar, N.
and Richter, C.
(2010),
Engineering the Electron Transport of Silicon-Based Molecular Electronic Devices via Molecular Dipole, Journal of Physical Chemistry C, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903972
(Accessed April 26, 2024)
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Engineering the Electron Transport of Silicon-Based Molecular Electronic Devices via Molecular Dipole
Published
Author(s)
, Nizeet Aquilar,
Abstract
We demonstrate that charge transport through a CMOS-compatible molecular electronic device is dominated by one of two different transport regimes depending on the dipole of the molecular monolayer in the junction,doping level of the silicon substrate, and bias applied to the device. The two observed transport regimes are (1) a regime where the transport is limited by the Schottky barrier and the molecular dipole results in silicon band-bending at the junction interface and (2) a tunneling regime where the molecular dipole creates a small local electric field that screens the electrical transport.Citation
Journal of Physical Chemistry C
Pub Type
Journals
Download Paper
Keywords
molecular electronics, silicon, dipole
Citation
Created October 15, 2010, Updated August 16, 2019