Towards clean and crackless transfer of graphene

Published

January 2, 2012

Author(s)

Xuelei X. Liang, Brent A. Sperling, Irene G. Calizo, Guangjun Cheng, Christina Hacker, Qin Zhang, Yaw S. Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R. Hight Walker, Zhongfan Liu, Lianmao Peng, Curt A. Richter

Abstract

We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device compatible substrate. Based on these results, we have developed a "modified RCA clean" transfer method which has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step towards large scale graphene-based electronic device applications.

Citation

Nano Letters

Volume

5

Issue

11

Pub Type

Journals

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Keywords

nanoelectronics, graphene, graphene transfer, cleaning, crackless, semiconductor device

Citation

Liang, X. , Sperling, B. , Calizo, I. , Cheng, G. , Hacker, C. , Zhang, Q. , Obeng, Y. , Yan, K. , Peng, H. , Li, Q. , Zhu, X. , Yuan, H. , Hight Walker, A. , Liu, Z. , Peng, L. and Richter, C. (2012), Towards clean and crackless transfer of graphene, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908399 (Accessed October 14, 2025)