Switching Mechanisms in Flexible Solution-Processed TiO2 Memristors

Published

July 11, 2012

Author(s)

Joseph L. Tedesco, Laurie Stephey, Madelaine H. Hernandez, Curt A. Richter, Nadine Gergel-Hackett

Abstract

Memristors are emerging as unique electrical devices with potential applications in memory, reconfigurable logic, and biologically-inspired computing. Due to the novelty of these devices, the complete details of their switching mechanism are not yet well established. In this work, the switching mechanism of our solution-processed titanium dioxide-based memristor is investigated by studying how variations in the device area and film thickness affect electrical behavior and correlating these behavioral changes to proposed switching mechanisms. The conduction path of the switching is also investigated through electrical characterization of devices both before and after physically cutting the devices in half, as well as through infrared imaging of the devices during operation. The results suggest that the device’s electrical behavior is dominated by a localized, charge-based phenomenon that exhibits a dependence on device area.

Citation

Nanotechnology

Volume

23

Issue

30

Pub Type

Journals

Keywords

Memristor, TiO2, Switching Mechanism, Flexible, Sol-gel

Citation

Tedesco, J. , Stephey, L. , Hernandez, M. , Richter, C. and Gergel-Hackett, N. (2012), Switching Mechanisms in Flexible Solution-Processed TiO2 Memristors, Nanotechnology (Accessed April 26, 2024)