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Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Published

Author(s)

Tian T. Shen, Wei Wu, Qingkai Yu, Curt A. Richter, Randolph E. Elmquist, David B. Newell, Yong P. Chen

Abstract

We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm × 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si substrates, with typical carrier mobilities ≈4000 cm2/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.
Citation
Applied Physics Letters

Keywords

graphene, CVD, QHE

Citation

Shen, T. , Wu, W. , Yu, Q. , Richter, C. , Elmquist, R. , Newell, D. and Chen, Y. (2011), Quantum Hall effect on centimeter scale chemical vapor deposited graphene films, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909565 (Accessed May 30, 2024)

Issues

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Created December 7, 2011, Updated February 19, 2017