U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Joseph Woicik (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 76 - 100 of 218

Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04 0.47

February 19, 2017
Author(s)
Larry Robins, J T. Armstrong, Mark D. Vaudin, Charles E. Bouldin, Joseph Woicik, Albert J. Paul, W. R. Thurber, Ryna B. Marinenko
The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 x 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by

Phase-Correct Bond Lengths in Crystalline-Ge x Si l-x Alloys

February 19, 2017
Author(s)
Joseph Woicik, K E. Miyano, C A. King, R W. Johnson, J G. Pellegrino, T L. Lee, Z H. Lu
Extended x-ray absorption fine structure performed at the Ge-K edge has determined the Ge-Ge and Ge-Si bond lengths in a series of crystalline-Ge l-x alloys (x [greater than/less than] 0.5) to be compositional dependent. This high-precision measurement was

X-Ray Absorption Fine-Structure Determination of Ferroelectric Distortion in SrtiO 3 Thin Films grown on Si(001)

February 19, 2017
Author(s)
Joseph Woicik, F S. Aguirre-Tostado, A Herrera-Gomez, R Droopad, Z Yu, D G. Schlom, E Karapetrova, P Zschack, P Pianetta
Polarization-dependent x-ray absorption fine structure together with x-ray diffraction have been used to study the local structure in SrTiO 3 thin films grown on Si(001). Our data indicate that below a critical thickness of approximately 80 , the in-plane

Crystal Structure of the Type I Clathrate Ba8Ni4Ge42

March 30, 2012
Author(s)
Winnie K. Wong-Ng, Qingzhen Huang, Igor Levin, Joseph C. Woicik, Xun Shi, Jihui Yang, James A. Kaduk
The crystal structure of Type-I clathrate Ba8Ni4Ge42 has been determined using neutron powder diffraction, transmission electron microscopy (TEM, for possible superlattice), extended X-ray absorption fine structure measurements. Ba8Ni4Ge42 is cubic with

Deactivation of Sub-Melt Laser Annealed Arsenic Ultra Shallow Junctions in Silicon During Subsequent Thermal Treatment

May 4, 2010
Author(s)
Joseph C. Woicik, D. Giubertoni, G. Pepponi, S. Gennaro, M. Bersani, M. A. Sahiner, S. P. Kelty, M. Kah, K. J. Kirkby, R. Doherty, M. A. Foad, F. Meirer, C. Streli, P. Pianetta
The use of non-equilibrium annealing approaches can produce a very high level of arsenic electrical activation in Si but subsequent thermal treatments between 500 and 800 C easily deactivate the dopant to a level one order of magnitude below the solid

A Combined Fit of Total Scattering and Extended X-ray Absorption Fine Structure Data for Local-Structure Determination in Crystalline Materials

October 5, 2009
Author(s)
Igor Levin, Victor L. Krayzman, Joseph C. Woicik, Terrell A. Vanderah, M. G. Tucker, Thomas Proffen
Reverse Monte Carlo (RMC) refinements of local structure using a simultaneous fit of x-ray/neutron total scattering and EXAFS data were developed to incorporate an explicit treatment of both single- and multiple-scattering contributions to EXAFS. The

A Ferroelectric Oxide Directly on Silicon

April 17, 2009
Author(s)
Joseph C. Woicik, Maitri P. Warusawithana, Cheng Cen, Charles R. Sleasman, Yulan Li, Jeffery Kluga, Lena F. Kourkoutis, Hao Li, Li-Peng Wang, Michael Bedzyk, David A. Muller, Long-Qing Chen, Jeremy Levy, Darrell G. Schlom
Silicon and silicon dioxide form what is arguably the most important technological interface. With the end of Moore s-law scaling for silicon fast approaching, alternatives to silicon dioxide are being pursued that may enable new device architectures and

Structural Changes behind the Diffuse Dielectric Response in AgNbO3

March 13, 2009
Author(s)
Igor Levin, Victor L. Krayzman, Joseph C. Woicik, J. Karapetrova, T. Proffen, M. G. Tucker, I. M. Reaney
Structural changes among the so-called M-polymorphs of AgNbO3 were analyzed using combined high-resolution X-ray diffraction, neutron total scattering, electron diffraction, and X-ray absorption fine structure measurements. These polymorphs crystallize

Correlation of Local Structure and Electrical Activation in Arsenic Ultra Shallow Junctions in Silicon

November 5, 2008
Author(s)
D. Giubertoni, Giancarlo Pepponi, Salvatore Gennaro, Massimo Bersani, M A. Sahiner, Stephen P. Kelty, Roisin Doherty, Majeed A. Foad, Max Kah, Karen J. Kirkby, Joseph Woicik
The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type Ultra Shallow Junctions in current and future VLSI technology. This is of peculiar relevance when studying novel