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X-Ray Standing-Wave Investigation of Valence-Electronic Structure



Joseph C. Woicik, E J. Nelson, T Kendelewicz, P Pianetta, D Heskett, J Warner, L E. Berman, B A. Karlin, I A. Vartanyants, M Z. Hasan, Z -. Shen


We introduce a new experiment method by which site-specific valence-electronic structure may be obtained. It utilizes the x-ray standing-wave interference field that results from the superposition of the incident and reflected x-ray beams within the vicinity of a crystal x-ray Bragg reflection. Resolution of the anion and cation contributions to the GaAs valence-band density of states is demonstrated.
Physical Review B (Condensed Matter and Materials Physics)
No. 12


site-specific, spectroscopy, valence-electronic structure


Woicik, J. , Nelson, E. , Kendelewicz, T. , Pianetta, P. , Heskett, D. , Warner, J. , Berman, L. , Karlin, B. , Vartanyants, I. , Hasan, M. and Shen, Z. (2001), X-Ray Standing-Wave Investigation of Valence-Electronic Structure, Physical Review B (Condensed Matter and Materials Physics) (Accessed July 17, 2024)


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Created September 1, 2001, Updated February 19, 2017