X-Ray Standing-Wave Investigation of Valence-Electronic Structure

Published

September 1, 2001

Author(s)

Joseph C. Woicik, E J. Nelson, T Kendelewicz, P Pianetta, D Heskett, J Warner, L E. Berman, B A. Karlin, I A. Vartanyants, M Z. Hasan, Z -. Shen

Abstract

We introduce a new experiment method by which site-specific valence-electronic structure may be obtained. It utilizes the x-ray standing-wave interference field that results from the superposition of the incident and reflected x-ray beams within the vicinity of a crystal x-ray Bragg reflection. Resolution of the anion and cation contributions to the GaAs valence-band density of states is demonstrated.

Citation

Physical Review B (Condensed Matter and Materials Physics)

Volume

64

Issue

No. 12

Pub Type

Journals

Keywords

site-specific, spectroscopy, valence-electronic structure

Citation

Woicik, J. , Nelson, E. , Kendelewicz, T. , Pianetta, P. , Heskett, D. , Warner, J. , Berman, L. , Karlin, B. , Vartanyants, I. , Hasan, M. and Shen, Z. (2001), X-Ray Standing-Wave Investigation of Valence-Electronic Structure, Physical Review B (Condensed Matter and Materials Physics) (Accessed April 26, 2024)