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Partial-Density of Occupied Valence States by X-Ray Standing Waves and High-Resolution Photoelectron Spectroscopy

Published

Author(s)

Joseph C. Woicik, E J. Nelson, T Kendelewicz, P Pianetta

Abstract

We decribe an experimental method by which site-specific valence-electronic structure may be obtained. It utilizes the spatial dependence of the electric-field intensity that results from the superposition of the incident and reflected x-ray beams within the vicinity of a crystal x-ray Bragg reflection. Resolution of the anion and cation contributions to the GaAs valence-band density of states is demonstrated.
Proceedings Title
Proceedings of the 20th National Congress of the Mexican Vacuum Society and the III Workshop on Optoelectronic Materials and Their Applications
Volume
63 No. 4
Conference Dates
August 27-September 2, 2000
Conference Location
Oaxaca, MX
Conference Title
National Congress of the Mexican Vacuum Society and the Workshop on Optoelectronic Materials and Their Applications

Keywords

valence electronic structure, x-ray standing waves

Citation

Woicik, J. , Nelson, E. , Kendelewicz, T. and Pianetta, P. (2001), Partial-Density of Occupied Valence States by X-Ray Standing Waves and High-Resolution Photoelectron Spectroscopy, Proceedings of the 20th National Congress of the Mexican Vacuum Society and the III Workshop on Optoelectronic Materials and Their Applications, Oaxaca, MX (Accessed March 3, 2024)
Created January 1, 2001, Updated February 19, 2017