Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Optical and Structural Studies of Compositional Inhomogeneity in Strain-Relaxed Indium Gallium Nitride Films

Published

Author(s)

Lawrence H. Robins, J T. Armstrong, Ryna B. Marinenko, Mark D. Vaudin, Charles E. Bouldin, Joseph C. Woicik, Albert J. Paul, W. R. Thurber, K E. Miyano, C A. Parker

Abstract

The structural and optical properties of indium gallium nitride (InxGa1-xN) films with 0.04
Proceedings Title
International Symposium on Compound Semiconductors| 27th | Compound Semiconductors : 2000 IEEE International Symposium | IEEE
Volume
2000
Issue
27th
Conference Dates
October 2-5, 2000
Conference Title
IEEE International Symposium on Compound Semiconductors

Keywords

cathodoluminescence, compositional inhomogeneity, EXAFS, indium gallium nitride, indium nitride, optical absorption, optical transmittance, phase separation, x-ray diffraction

Citation

Robins, L. , Armstrong, J. , Marinenko, R. , Vaudin, M. , Bouldin, C. , Woicik, J. , Paul, A. , Thurber, W. , Miyano, K. and Parker, C. (2001), Optical and Structural Studies of Compositional Inhomogeneity in Strain-Relaxed Indium Gallium Nitride Films, International Symposium on Compound Semiconductors| 27th | Compound Semiconductors : 2000 IEEE International Symposium | IEEE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850464 (Accessed March 1, 2024)
Created November 1, 2001, Updated October 7, 2019