U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Mark D. Vaudin (Assoc)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 50 of 92

Experimental and Simulation Studies of Resistivity of Nanoscale Copper Films

February 19, 2009
Author(s)
Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul
The effect of film thickness on the resistivity of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance, film thickness, and mean grain-size measurements by using four-point probe, profilometer, and

Structural and thermoelectric properties of Bi2Sr2Co2Oy thin films on LaAlO3 (100) and fused silica substrates

January 12, 2009
Author(s)
Winnie K. Wong-Ng, Mark D. Vaudin, Shufang Wang, L Venimadhav, Shengming Guo, Ke Chen, Qi Li, A Soukiassian, D.G. Schlom, X.Q. Pan, D.G. Cahill, X. X. Xi
We have grown Bi2Sr2Co2Oy thin films on LaAlO3 (100) and fused silica substrates by pulsed laser deposition. The films on LaAlO3 are c-axis oriented and partially in-plane aligned with multiple domains while the films on fused silica are preferred c-axis

Measurement of Axisymmetric Crystallographic Texture

January 1, 2009
Author(s)
Mark D. Vaudin
Crystallographic texture has for many years been the fiefdom of metallurgists and geologists, who have developed elegant methodologies for the analysis of highly complex textures and texture evolutions. Over the past two decades, the importance and

Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors

October 16, 2008
Author(s)
Abhishek Motayed, Mark D. Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N. Mohammad
We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of NH3

Electrodeposited Epitaxial Fe Subscript 100-x}Co Subscript x} Films on GaAs

October 16, 2008
Author(s)
J Mallett, Erik B. Svedberg, Mark D. Vaudin, Leonid A. Bendersky, William F. Egelhoff Jr., Thomas P. Moffat
The electrodeposition of epitaxial cube-on-cube Fe _(subscript) 100-x}Co_(subscript) x} films onto n-GaAs is described from ferrous ammonium sulfate solutions containing various concentrations of cobalt sulfate. The cobalt composition in a series of 400nm

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the

Equi-Axed Grain Formation in Electrodeposited Sn-Bi

December 29, 2007
Author(s)
E Sandnes, Maureen E. Williams, Mark D. Vaudin, Gery R. Stafford
Sn is widely used as a coating in the electronics industry because it provides excellent solderability, ductility, electrical conductivity and corrosion resistance. However, Sn whiskers have been observed to grow spontaneously from Sn electrodeposits and

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

Texture and Phase Analysis of a Ca 3 Co 4 O 9 / Si (100) Thermoelectric Film

July 26, 2007
Author(s)
Winnie K. Wong-Ng, Y F. Hu, Mark D. Vaudin, B He, Makoto Otani, Nathan Lowhorn, Q Li
This paper reports the texture analysis as well as the identification of two crystalline phases between a thin film of monoclinic Ca3Co4O9 and a cubic (100) Si substrate, using a diffractometer equipped with a 2-dimensional area detector. No reflections

Electrodeposition of Bismuth From Nitric Acid Electrolyte

April 2, 2007
Author(s)
E Sandnes, Maureen E. Williams, Ugo Bertocci, Mark D. Vaudin, Gery R. Stafford
The electrodeposition of Bi from acidic nitrate solution was examined. Bismuth deposition was determined to be quasi-reversible on Au, with a current efficiency of 100%, based on integration of deposition and stripping voltammetric waves. No interference

Phase Relations in the Ba-Y-Cu-O Films on SrTiO3 for the -Ex Situ BaF2- Process

March 5, 2007
Author(s)
Winnie K. Wong-Ng, Makoto Otani, Lawrence P. Cook, Mark D. Vaudin, James P. Cline, Ron Feenstra, T G. Holesinger
In situ x-ray diffraction was used to establish the phase relations in high-Tc superconductor Ba–Y– Cu–O films grown on SrTiO3 through the ex situ BaF2 process. These relations differ from bulk equilibrium phase assemblages in the BaO–Y2O3–CuOx system. In