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Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy

Published

Author(s)

Robert F. Cook, Yvonne B. Gerbig, Mark D. Vaudin, Jeroen Schoenmaker, Stephan J. Stranick

Abstract

A confocal Raman microscopy technique is presented that allows stress measurement at the nanoscale, which in turn enables measurement of stress-intensity factors (SIF) at crack tips and thus toughness to be estimated. Peak-fitting and super-resolution techniques enable stress resolution of approximately 20 MPa at spatial resolution of approximately 100 nm. Micro- and nano-indentation and crack field stress distributions are measured and compared with analytical expressions. The SIF for indentation cracks in Si is shown to be in the range 0.2 MPa m1/2 to 0.4 MPa m1/2, consistent with chipping-induced indentation stress relief and the toughness of Si.
Proceedings Title
12th International Conference on Fracture
Conference Dates
July 12-17, 2009
Conference Location
Ottawa, CA

Citation

Cook, R. , Gerbig, Y. , Vaudin, M. , Schoenmaker, J. and Stranick, S. (2009), Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy, 12th International Conference on Fracture, Ottawa, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900910 (Accessed July 19, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 12, 2009, Updated February 19, 2017