Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy

Published

July 12, 2009

Author(s)

Robert F. Cook, Yvonne B. Gerbig, Mark D. Vaudin, Jeroen Schoenmaker, Stephan J. Stranick

Abstract

A confocal Raman microscopy technique is presented that allows stress measurement at the nanoscale, which in turn enables measurement of stress-intensity factors (SIF) at crack tips and thus toughness to be estimated. Peak-fitting and super-resolution techniques enable stress resolution of approximately 20 MPa at spatial resolution of approximately 100 nm. Micro- and nano-indentation and crack field stress distributions are measured and compared with analytical expressions. The SIF for indentation cracks in Si is shown to be in the range 0.2 MPa m1/2 to 0.4 MPa m1/2, consistent with chipping-induced indentation stress relief and the toughness of Si.

Proceedings Title

12th International Conference on Fracture

Conference Dates

July 12-17, 2009

Conference Location

Ottawa, CA

Pub Type

Conferences

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Citation

Cook, R. , Gerbig, Y. , Vaudin, M. , Schoenmaker, J. and Stranick, S. (2009), Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy, 12th International Conference on Fracture, Ottawa, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900910 (Accessed March 13, 2025)