Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Effect of crystallographic orientation on phase transformations during indentation of silicon

Published

Author(s)

Yvonne B. Gerbig, Dylan Morris, Stephan J. Stranick, Mark D. Vaudin, Robert F. Cook

Abstract

In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation occur, for a load range from 20 mN to 200 mN, were analyzed and compared for the orientations Si(001), Si(110)and Si(111). It was found that the plastic deformation combined with the phase transformation during loading was initiated at lower loads (pressures) for Si(110) and Si(111) than for Si(001). Also, the pressure for the phase transformation during unloading was strongly influenced by the crystallographic orientation, with up to 38 % greater values for Si(110) and Si(111) compared to Si(001). Mapping the residual stress field around indentations by confocal Raman spectroscopy revealed significant differences in the stress pattern for the various orientations.
Citation
Journal of Materials Research
Volume
24
Issue
3

Keywords

nano-indentation, phase transformation, Si, Raman spectroscopy

Citation

Gerbig, Y. , Morris, D. , Stranick, S. , Vaudin, M. and Cook, R. (2009), Effect of crystallographic orientation on phase transformations during indentation of silicon, Journal of Materials Research, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854143 (Accessed April 13, 2024)
Created March 9, 2009, Updated February 19, 2017