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Search Publications by: Joseph J. Kopanski (Assoc)

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Displaying 51 - 75 of 130

Scanning Probe Microscopy for Dielectric and Metal Characterization

June 10, 2008
Author(s)
Joseph J. Kopanski, Thomas R. Walker
The properties of both insulators and metals can be characterized capacitively with scanning probe microscopy, though the techniques employed are different. Intermittent contact scanning capacitance microscopy (IC-SCM) is a useful technique for

Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere

September 30, 2007
Author(s)
Joseph Kopanski, Muhammad Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R. Walker
The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measures

Surface Grafting of Polypyrrole onto Silicon Wafers

August 1, 2007
Author(s)
Daeson Sohn, Hyoseung Moon, Michael J. Fasolka, Naomi Eidelman, Sang-Mo Koo, Curt A. Richter, Eun S. Park, Joseph Kopanski, Eric J. Amis
A micromolding technique in capillaries was adapted to make uniform patterns of polypyrrole (Ppy), and the conductivities of the patterns were measured by direct contact IV curves and conductance AFM methods. Noncovalently bound Ppy patterns have high

Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application

May 16, 2007
Author(s)
Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E. Ioannou, Joseph Kopanski, John S. Suehle, Curt A. Richter
We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to

Precise Manipulation and Alignment of Single Nanowire

March 2, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire

Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

March 1, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align

Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM

November 1, 2006
Author(s)
Hao Xiong, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, which

Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

February 1, 2006
Author(s)
Seong-Eun Park, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in the

NIST Accomplishments in Nanotechnology

January 1, 2006
Author(s)
Michael T. Postek, Joseph J. Kopanski, David A. Wollman
This document includes a list of selected NIST accomplishments in nanotechnology for the period of fiscal years 2004 and 2005. These accomplishments are grouped into the NNI s Program Component Areas (PCAs), which are defined in the text. The NNI has

Towards reproducible SCM Image Interpretation

February 1, 2004
Author(s)
Joseph Kopanski, Jay F. Marchiando, Brian G. Rennex, David S. Simons, R P. Chaudhury
SCM images, and the two-dimensional (2-D) dopant profiles extracted from them, show poor reproducibility from laboratory to laboratory. Major factors contributing to SCM image variability include: poor sample surface and oxide quality, excess carrier