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Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application

Published

Author(s)

Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E. Ioannou, Joseph Kopanski, John S. Suehle, Curt A. Richter

Abstract

We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible Write/Read/Erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated.
Citation
Nanotechnology
Volume
18
Issue
235204

Keywords

non-volatile memory, retention, Silicon nanowire, SONOS

Citation

Li, Q. , Zhu, X. , Xiong, H. , Koo, S. , Ioannou, D. , Kopanski, J. , Suehle, J. and Richter, C. (2007), Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32610 (Accessed June 14, 2024)

Issues

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Created May 15, 2007, Updated October 12, 2021