Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E. Ioannou, Joseph Kopanski, John S. Suehle, Curt A. Richter
We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible Write/Read/Erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated.
, Zhu, X.
, Xiong, H.
, Koo, S.
, Ioannou, D.
, Kopanski, J.
, Suehle, J.
and Richter, C.
Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32610
(Accessed December 11, 2023)