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Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling

Published

Author(s)

Jihui Yang, Joseph Kopanski, A Postula, M Bialkowski

Abstract

A special scanning capacitance microscopy (SCM) sample preparation method is exploited to make unipolar and p-n junction samples with different interface state densities and an identical oxide thickness. Using these samples, the interface states effect on SCM measurements is singled out. SCM measurements on those junction samples are performed with and without the atomic force microscopy laser illumination. Results show both the interface charges and the illumination significantly affect the SCM signals of p-n junctions. Qualitative SCM p-n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and the simulation.
Citation
Microelectronics Reliability
Volume
45

Keywords

dopant profiling, interface face traps, scanning capacitance microscopy, SCM

Citation

Yang, J. , Kopanski, J. , Postula, A. and Bialkowski, M. (2004), Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling, Microelectronics Reliability, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31743 (Accessed June 12, 2024)

Issues

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Created December 19, 2004, Updated October 12, 2021