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Displaying 176 - 200 of 296

Thermal Component Models for Electro-Thermal Analysis of Multichip Power Modules

October 24, 2002
Author(s)
J J. Rodriguez, John V. Reichl, Zharadeen R. Parrilla, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Jih-Sheng Lai
Thermal component models are developed for multi-chip IGBT power electronic modules (PEM) and associated high-power converter heatsinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the

A Monolithic Implementation of Interface Circuitry for CMOS Compatible Gas-Sensor System

July 1, 2002
Author(s)
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, David W. Berning, Allen R. Hefner Jr., Stephen Semancik, Richard E. Cavicchi
A monolithic CMOS micro-gas-sensor system, designed and fabricated in a standard CMOS process, is described. The gas-sensor system incorporates an array of four microhotplate-based gas-sensing structures. The system utilizes a thin film of tin-oxide (SnO 2

Transient Heating Study of Microhotplates by Using a High-Speed Thermal Imaging System

March 1, 2002
Author(s)
Muhammad Afridi, David W. Berning, Allen R. Hefner Jr., John S. Suehle, Mona E. Zaghloul, Eric Kelley, Zharadeen R. Parrilla, Colleen E. Hood
A high-speed thermal imaging system is used to investigate the dynamic thermal behavior of MEMS-based (MicroElectroMechanical Systems) microhotplate devices. These devices are suspended microstructures fabricated in CMOS technology and are used in various

Characterization and Modeling of Silicon-Carbide Power Devices

December 1, 2001
Author(s)
Allen R. Hefner Jr., David W. Berning, Ty R. McNutt, Alan Mantooth, Jih-Sheng Lai, Ranbir Singh
New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new

High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers

June 7, 2001
Author(s)
Ranbir Singh, Allen R. Hefner Jr., David W. Berning, M. Palmer
This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were