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Displaying 201 - 225 of 296

Use of the Oscillation Based Built-in Self-test Method for Smart Sensor Devices

May 7, 2001
Author(s)
Angela Hodge, R. Newcomb, Allen R. Hefner Jr.
An oscillation-based built in self-test (BIST) method is presented for functional testing of mixed signal devices. An integral component of this method of on-chip testing involves transforming an oscillating analog signal into a digital clock-like signal

A High-Speed Thermal Imaging System for Semiconductor Device Analysis

April 1, 2001
Author(s)
Allen R. Hefner Jr., David W. Berning, David L. Blackburn, Christophe C. Chapuy, Sebastien Bouche
A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument

IGBT Model Validation for Soft-Switching Applications

March 31, 2001
Author(s)
David W. Berning, Allen R. Hefner Jr.
Techniques are described for validating the performance of Insulated-Gate Bipolar Transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that

SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications

March 1, 2001
Author(s)
Allen R. Hefner Jr., Ranbir Singh, Jih-Sheng Lai, David W. Berning, Sebastien Bouche, Christophe C. Chapuy
The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery

A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators

January 1, 2001
Author(s)
Curt A. Richter, Allen R. Hefner Jr., Eric M. Vogel
We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar

SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications

December 31, 2000
Author(s)
Allen R. Hefner Jr., Ranbir Singh, Jih-Sheng Lai, David W. Berning, Sebastien Bouche, Christophe C. Chapuy
The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery

Automated Parameter Extraction Software for Advanced IGBT Modeling

July 10, 2000
Author(s)
Allen R. Hefner Jr., Sebastien Bouche
A software package for extracting parameters used in advanced IGBT models is presented. In addition, new model equations and extraction procedures are introduced that more accurately describe a wide range of IGBT types including the recently developed Warp

4 Amp 4H-SiC JBD Diodes

May 1, 2000
Author(s)
Ranbir Singh, Sei-Hyung Ryu, M. Palmer, Allen R. Hefner Jr., Jih-Sheng Lai

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

March 1, 2000
Author(s)
Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein
The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Reverse

IGBT Model Validation for Soft-Switching Applications

November 1, 1999
Author(s)
David W. Berning, Allen R. Hefner Jr.
Techniques are described for validating the performance of Insulated-Gate Bipolar Transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that