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Search Publications by: Herbert S. Bennett (Assoc)

Displaying 51 - 75 of 82

For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence

January 1, 1999

Author(s)

Herbert S. Bennett, R. J. Turton

Experimental data and theoretical calculations for the dopant dependence of the indirect energy gap in silicon are reviewed. Measurement techniques are compared. Agreement with theory is discussed. The indirect energy gap data for silicon are summarized

Viewpoint: Roadmaps for Compound Semiconductors: Knowledge-based Investments for Next Century

January 1, 1999

Author(s)

Herbert S. Bennett

Imagine a world without desk-top laser printers or laser fax machines, without cellular telephones or pagers or global positioning, without compact disk (CD) players or CD players or CD-ROMs or digital video disk DVD players, and without the combinations

High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Densities of States and Effective Intrinsic Carrier Concentrations

March 15, 1998

Author(s)

Herbert S. Bennett

High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities

March 1, 1998

Author(s)

Herbert S. Bennett

The changes in carrier densities of states band edges, effective carrier concentrations and carrier mobilities due to high dopant and carrier concentration effects in Ga 1-yAl yAs are calculated at 300 K ro donor densities, N D, between 10 16 cm -3 and for

High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities

December 31, 1997

Author(s)

Herbert S. Bennett

Advances in Computer Simulations

December 31, 1996

Author(s)

Herbert S. Bennett

Majority and Minority Electron and Hole Mobilities in Heavily Doped Gallium Aluminum Arsenide

October 1, 1996

Author(s)

Herbert S. Bennett

Workshop on Planning for Compound Semiconductor Technology

February 1, 1996

Author(s)

Herbert S. Bennett

Summary Report of the Workshop on Planning for Compound Semiconductor Technology

August 1, 1995

Author(s)

Herbert S. Bennett

Making Displays Deliver a Full Measure

January 1, 1995

Author(s)

Herbert S. Bennett, Charles D. Fenimore, B. F. Field, Edward F. Kelley

Physics for Device Simulations and Its Verification by Measurements

December 31, 1994

Author(s)

Herbert S. Bennett, J R. Lowney

Research on Flat Panel Display Measurements at the National Institute of Standards and Technology

July 1, 1994

Author(s)

B. F. Field, Edward F. Kelley, Charles D. Fenimore, Herbert S. Bennett

Can Displays Deliver a Full Measure?: Manufacturing

January 1, 1994

Author(s)

Herbert S. Bennett, Charles D. Fenimore, B. F. Field, Edward F. Kelley

Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors

December 31, 1992

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney

Majority and Minority Mobilities in Heavily Doped Silicon for Device Simulations

December 31, 1992

Author(s)

Herbert S. Bennett, J R. Lowney

Calculated Majority- and Minority-Carrier Mobilities in Heavily Doped Silicon and Comparisons With Experiment

March 1, 1992

Author(s)

Herbert S. Bennett, J R. Lowney

Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations, Complete paper

February 1, 1992

Author(s)

Herbert S. Bennett, J R. Lowney, M. Tomizawa, T. Ishibashi

Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations, Extended Abstract

December 31, 1991

Author(s)

Herbert S. Bennett, J R. Lowney, M. Tomizawa, T. Ishibashi

Verification of Effective Intrinsic Carrier Concentrations for Numerical Simulations of Gallium Arsenide Bipolar Transistors, Extended Abstract

December 31, 1991

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney

Majority and Minority Electron and Hole Mobilities in Heavily Doped GaAs

May 15, 1991

Author(s)

J R. Lowney, Herbert S. Bennett

A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base

December 31, 1990

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney

Physics for Numerical Simulation of Silicon and Gallium Arsenide Transistors

December 31, 1990

Author(s)

Herbert S. Bennett, J R. Lowney

Laser Induced Damage in Optical Materials: 1989

January 1, 1990

Author(s)

Herbert S. Bennett, L. L. Chase, A. H. Guenther, B. E. Newnam, M. J. Soileau

Technology Transfer at NIST

December 31, 1989

Author(s)

Brian C. Belanger, Herbert S. Bennett, Loren W. Linholm, Thomas J. Russell, Harry A. Schafft

Effects of Doping-Density Gradients on Band-Gap Narrowing in Silicon and GaAs Devices

June 15, 1989

Author(s)

J R. Lowney, Herbert S. Bennett