Tomizawa, M.
, Ishibashi, T.
, Bennett, H.
and Lowney, J.
(1992),
Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors, Solid-State Electronics
(Accessed May 9, 2025)
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Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors
Published
Author(s)
M. Tomizawa, T. Ishibashi, ,
Citation
Solid-State Electronics
Volume
35
Issue
6
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1992, Updated October 12, 2021