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Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors

Published

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney
Citation
Solid-State Electronics
Volume
35
Issue
6

Citation

Tomizawa, M. , Ishibashi, T. , Bennett, H. and Lowney, J. (1992), Effects of Heavy Doping on Numerical Simulations of Gallium Arsenide Bipolar Transistors, Solid-State Electronics (Accessed April 19, 2024)
Created December 30, 1992, Updated October 12, 2021