Tomizawa, M.
, Ishibashi, T.
, Bennett, H.
and Lowney, J.
(1991),
Verification of Effective Intrinsic Carrier Concentrations for Numerical Simulations of Gallium Arsenide Bipolar Transistors, Extended Abstract, Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD), Oiso, 1, JA
(Accessed October 10, 2024)
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Verification of Effective Intrinsic Carrier Concentrations for Numerical Simulations of Gallium Arsenide Bipolar Transistors, Extended Abstract
Published
Author(s)
M. Tomizawa, T. Ishibashi, ,
Proceedings Title
Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD)
Conference Dates
May 26-27, 1991
Conference Location
Oiso, 1, JA
Pub Type
Conferences
Citation
Issues
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Created December 30, 1991, Updated October 12, 2021