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Verification of Effective Intrinsic Carrier Concentrations for Numerical Simulations of Gallium Arsenide Bipolar Transistors, Extended Abstract

Published

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney
Proceedings Title
Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD)
Conference Dates
May 26-27, 1991
Conference Location
Oiso, 1, JA

Citation

Tomizawa, M. , Ishibashi, T. , Bennett, H. and Lowney, J. (1991), Verification of Effective Intrinsic Carrier Concentrations for Numerical Simulations of Gallium Arsenide Bipolar Transistors, Extended Abstract, Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD), Oiso, 1, JA (Accessed June 25, 2024)

Issues

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Created December 30, 1991, Updated October 12, 2021