Tomizawa, M.
, Ishibashi, T.
, Bennett, H.
and Lowney, J.
(1990),
A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base, Extended Abstracts, National Meeting of the Japanese Society of Applied Physics, Morioka, 1, JA
(Accessed April 21, 2025)
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A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base
Published
Author(s)
M. Tomizawa, T. Ishibashi, ,
Proceedings Title
Extended Abstracts, National Meeting of the Japanese Society of Applied Physics
Conference Location
Morioka, 1, JA
Pub Type
Conferences
Citation
Issues
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Created December 30, 1990, Updated October 12, 2021