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PUBLICATIONS

A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base

Published

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney
Proceedings Title
Extended Abstracts, National Meeting of the Japanese Society of Applied Physics
Conference Location
Morioka, 1, JA
Pub Type
Conferences

Citation

Tomizawa, M. , Ishibashi, T. , Bennett, H. and Lowney, J. (1990), A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base, Extended Abstracts, National Meeting of the Japanese Society of Applied Physics, Morioka, 1, JA (Accessed October 9, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 30, 1990, Updated October 12, 2021
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