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A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base

Published

Author(s)

M. Tomizawa, T. Ishibashi, Herbert S. Bennett, J R. Lowney
Proceedings Title
Extended Abstracts, National Meeting of the Japanese Society of Applied Physics
Conference Location
Morioka, 1, JA

Citation

Tomizawa, M. , Ishibashi, T. , Bennett, H. and Lowney, J. (1990), A Study of GaAs Homojunction Bipolar Transistor with a Highly-Doped Base, Extended Abstracts, National Meeting of the Japanese Society of Applied Physics, Morioka, 1, JA (Accessed April 21, 2024)
Created December 30, 1990, Updated October 12, 2021