For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence
Herbert S. Bennett, R. J. Turton
Experimental data and theoretical calculations for the dopant dependence of the indirect energy gap in silicon are reviewed. Measurement techniques are compared. Agreement with theory is discussed. The indirect energy gap data for silicon are summarized for temperatures from 0 K to 300 K. The applications of these data to device simulations are also given.
EMIS Data Review
doping dependence, energy gap, measurement techniques, silicon, theory
and Turton, R.
For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence, EMIS Data Review
(Accessed December 3, 2023)