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For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence

Published

Author(s)

Herbert S. Bennett, R. J. Turton

Abstract

Experimental data and theoretical calculations for the dopant dependence of the indirect energy gap in silicon are reviewed. Measurement techniques are compared. Agreement with theory is discussed. The indirect energy gap data for silicon are summarized for temperatures from 0 K to 300 K. The applications of these data to device simulations are also given.
Citation
EMIS Data Review

Keywords

doping dependence, energy gap, measurement techniques, silicon, theory

Citation

Bennett, H. and Turton, R. (1999), For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence, EMIS Data Review (Accessed May 29, 2024)

Issues

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Created December 31, 1998, Updated October 12, 2021