Bennett, H.
and Turton, R.
(1999),
For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence, EMIS Data Review
(Accessed January 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
For EMIS/INSPEC of IEE Data Review Series on Silicon 7.5 Indirect Energy Gap of Si, Doping Dependence
Published
Author(s)
, R. J. Turton
Abstract
Experimental data and theoretical calculations for the dopant dependence of the indirect energy gap in silicon are reviewed. Measurement techniques are compared. Agreement with theory is discussed. The indirect energy gap data for silicon are summarized for temperatures from 0 K to 300 K. The applications of these data to device simulations are also given.Citation
EMIS Data Review
Pub Type
Others
Keywords
doping dependence, energy gap, measurement techniques, silicon, theory
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1998, Updated October 12, 2021