Bennett, H.
and Lowney, J.
(1990),
Physics for Numerical Simulation of Silicon and Gallium Arsenide Transistors, Solid-State Electronics
(Accessed May 18, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Physics for Numerical Simulation of Silicon and Gallium Arsenide Transistors
Published
Author(s)
,
Citation
Solid-State Electronics
Volume
33
Issue
6
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1990, Updated October 12, 2021