Bennett, H.
(1997),
High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities, Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI
(Accessed April 23, 2024)
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High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities
Published
Author(s)
Proceedings Title
Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices
Issue
6
Conference Dates
December 8-13, 1997
Conference Location
Maui, HI
Pub Type
Conferences
Citation
Created December 31, 1997, Updated February 17, 2017