Bennett, H.
(1997),
High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities, Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI
(Accessed December 7, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities
Published
Author(s)
Proceedings Title
Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices
Issue
6
Conference Dates
December 8-13, 1997
Conference Location
Maui, HI
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1997, Updated February 17, 2017