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High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities

Published

Author(s)

Herbert S. Bennett
Proceedings Title
Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices
Issue
6
Conference Dates
December 8-13, 1997
Conference Location
Maui, HI

Citation

Bennett, H. (1997), High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities, Proc., International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI (Accessed April 14, 2024)
Created December 31, 1997, Updated February 17, 2017