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Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations, Extended Abstract

Published

Author(s)

Herbert S. Bennett, J R. Lowney, M. Tomizawa, T. Ishibashi
Proceedings Title
Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD)
Issue
6
Conference Dates
May 26-27, 1991
Conference Location
Oiso, 1, JA

Citation

Bennett, H. , Lowney, J. , Tomizawa, M. and Ishibashi, T. (1991), Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations, Extended Abstract, Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD), Oiso, 1, JA (Accessed July 21, 2024)

Issues

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Created December 30, 1991, Updated October 12, 2021