Bennett, H.
, Lowney, J.
, Tomizawa, M.
and Ishibashi, T.
(1991),
Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations, Extended Abstract, Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD), Oiso, 1, JA
(Accessed December 5, 2024)
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Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations, Extended Abstract
Published
Author(s)
, , M. Tomizawa, T. Ishibashi
Proceedings Title
Proc., 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD)
Issue
6
Conference Dates
May 26-27, 1991
Conference Location
Oiso, 1, JA
Pub Type
Conferences
Citation
Issues
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Created December 30, 1991, Updated October 12, 2021