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High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities

Published

Author(s)

Herbert S. Bennett

Abstract

The changes in carrier densities of states band edges, effective carrier concentrations and carrier mobilities due to high dopant and carrier concentration effects in Ga1-yAlyAs are calculated at 300 K ro donor densities, ND, between 1016 cm-3 and for acceptor densities, NA between 1016 cm-3 and 1020 cm-3. The mole fraction of AlAs, y, varies between0.0 and 0.3 in these calculations. Only one quantum mechanical theory is used to treat both sides of the Mott transition in these calculations that give an internally self-consistent description of carrier transport for Ga1-yAlyAs heterostructures.
Citation
Semiconductor Science and Technology

Keywords

band structure, carrier densities of stakes, gallium aluminum arsenide, mobilities

Citation

Bennett, H. (1998), High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Band Structure, Effective Carrier Concentrations, and Mobilities, Semiconductor Science and Technology (Accessed April 19, 2024)
Created March 1, 1998, Updated February 17, 2017