Bennett, H.
(1996),
Majority and Minority Electron and Hole Mobilities in Heavily Doped Gallium Aluminum Arsenide, Journal of Applied Physics
(Accessed July 20, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Majority and Minority Electron and Hole Mobilities in Heavily Doped Gallium Aluminum Arsenide
Published
Author(s)
Citation
Journal of Applied Physics
Volume
80
Issue
7
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created October 1, 1996, Updated February 17, 2017